Preparation of Microcrystalline Silicon Films by Very-High-Frequency Digital Chemical Vapor Deposition

1992 ◽  
Vol 31 (Part 1, No. 6B) ◽  
pp. 1948-1952 ◽  
Author(s):  
Masanori Otobe ◽  
Shunri Oda
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Very High

MICROCRYSTALLINE SILICON FILMS PREPARED BY VERY HIGH FREQUENCY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION AT LOW TEMPERATURE

2005 ◽  
Vol 19 (18) ◽  
pp. 3013-3020
Author(s):  
ZHIMENG WU ◽  
QINGSONG LEI ◽  
JIANPING XI ◽  
ZHAO YING ◽  
XINHUA GENG
Keyword(s):  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Silane Concentration ◽  
Very High

Intrinsic microcrystalline silicon films have been prepared using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at low temperature. The effect of silane concentration and power density on the deposition rate and crystallinity of silicon films has been investigated. The Raman spectra indicates a phase transition from microcrystalline to amorphous phase at silane concentrations of higher than 6%. A growth rate of microcrystalline films as high as 6.6 A/s is achieved at a silane concentration of 6% and the crystalline volume fraction Xc is 39%. We have also observed that the decrease of power density shifts the phase transition to low silane concentration.

Nanocrystalline Silicon Films Grown at High Pressure in Very High Frequency Plasma Enhanced Chemical Vapor Deposition System

2010 ◽  
Vol 663-665 ◽  
pp. 1171-1174 ◽  
Author(s):  
Yan Qing Guo ◽  
Rui Huang ◽  
Jie Song ◽  
Xiang Wang ◽  
Yi Xiong Zhang
Keyword(s):  
High Pressure ◽  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Very High Frequency ◽  
Hydrogen Dilution ◽  
Very High ◽  
Nanocrystalline Silicon Films

Nanocrystalline silicon films have been fabricated from SiH4 diluted with H2 in very high frequency (40.68 MHz) plasma enhanced chemical vapor deposition system at low temperatures (250oC). The influence of pressure on the structural properties of nanocrystalline silicon films has been investigated. The experimental results reveal that a very high hydrogen dilution is needed to crystallize the film grown at high pressure. If the hydrogen dilution is not high enough, the film could also be crystallized through lowering the pressure. Furthermore, the crystallinity and grain size increase with decreasing the pressure. These results could be attributed to the increase of ion bombardment energy and the higher atomic hydrogen flux toward the growing film surface at lower pressures.

Photoluminescence Characteristics of Silicon Oxynitride Films at Different Annealing Temperatures

2010 ◽  
Vol 663-665 ◽  
pp. 336-339
Author(s):  
Jie Song ◽  
Yan Qing Guo ◽  
Xiang Wang ◽  
Yi Xiong Zhang ◽  
Chao Song ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Frequency ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Maximum Intensity ◽  
Silicon Oxynitride ◽  
Very High Frequency ◽  
Annealing Temperatures ◽  
Very High

Silicon oxynitride films were deposited in very-high-frequency (40.68 MHz) plasma enhanced chemical vapor deposition (VHF-PECVD), and subsequently annealed between 400 and 1200°C in N2 ambient. The effect of annealing temperature on the PL characteristics of the samples was investigated. The experimental results reveal that a broad PL peak around 430 nm (2.88eV) appears in all of the samples. The maximum intensity of this broad PL peak was obtained in the sample annealed at 400°C. The PL characteristics of the annealed samples were discussed.

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