Comprehensive Study of Lateral Grain Growth in Poly-Si Films by Excimer Laser Annealing and Its Application to Thin Film Transistors

1994 ◽  
Vol 33 (Part 1, No. 10) ◽  
pp. 5657-5662 ◽  
Author(s):  
Hiroyuki Kuriyama ◽  
Tomoyuki Nohda ◽  
Yoichirou Aya ◽  
Takashi Kuwahara ◽  
Kenichiro Wakisaka ◽  
...  
1993 ◽  
Vol 32 (Part 1, No. 1B) ◽  
pp. 474-481 ◽  
Author(s):  
Ichirou Asai ◽  
Noriji Kato ◽  
Mario Fuse ◽  
Toshihisa Hamano

2013 ◽  
Vol 811 ◽  
pp. 177-180
Author(s):  
Jyh Liang Wang ◽  
Chun Chien Tsai ◽  
Chuan Chou Hwang ◽  
Tsang Yen Hsieh

High performance and device uniformity n-channel low-temperature poly-silicon (LTPS) bottom-gate (BG) thin film transistors (TFTs) with artificially-controlled lateral grain growth have been performed by excimer laser crystallization (ELC). The BG TFTs (W/L = 1.5 μm/1.5 μm) demonstrate field-effect-mobility of 323 cm2/Vs and high Ion/Ioff of 9.5 × 108. The proposed BG TFTs reveal the superior electrical characteristics, device uniformity, and reliability than conventional top-gate ones.


1993 ◽  
Vol 32 (Part 1, No. 12B) ◽  
pp. 6190-6195 ◽  
Author(s):  
Hiroyuki Kuriyama ◽  
Tomoyuki Nohda ◽  
Satoshi Ishida ◽  
Takashi Kuwahara ◽  
Shigeru Noguchi ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document