Hydrogen Passivation of Donors and Hydrogen States in Heavily Doped n-Type Silicon

ABSTRACTInfrared spectroscopy has been used to study hydrogen passivation of P, As, and Sb donors in Si. The spectra show several new absorption bands due to donor-H complexes. By comparing spectra after different heat treatments it is shown directly that the passivation is due to complex formation.

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The effect of short-term heat treatment on the thermoelectric properties of heavily doped n-type silicon germanium alloys

Applied Energy ◽

10.1016/0306-2619(81)90049-0 ◽

1981 ◽

Vol 9 (2) ◽

pp. 131-137 ◽

Cited By ~ 5

Author(s):

V.S. Shukla ◽

D.M. Rowe

Keyword(s):

Heat Treatment ◽

Thermoelectric Properties ◽

Silicon Germanium ◽

Short Term ◽

Type Silicon ◽

Heavily Doped ◽

Silicon Germanium Alloys

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Orbach relaxation process in heavily doped n-type silicon

phys stat sol (a) ◽

10.1002/pssa.2210560254 ◽

1979 ◽

Vol 56 (2) ◽

pp. K109-K112

Author(s):

Y. Ochiai ◽

E. Matsuura

Keyword(s):

Relaxation Process ◽

Type Silicon ◽

Heavily Doped

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Hydrogen in Silicon

MRS Proceedings ◽

10.1557/proc-104-229 ◽

1987 ◽

Vol 104 ◽

Cited By ~ 19

Author(s):

J. W. Corbett ◽

J. L. Lindström ◽

S. J. Pearton

Keyword(s):

Hydrogen Diffusion ◽

Hydrogen Passivation ◽

Floating Zone ◽

Dangling Bonds ◽

Low Resistivity ◽

Shallow Donors ◽

Type Silicon ◽

Shallow Acceptors ◽

P Type ◽

Diffusion Profiles

ABSTRACTWe summarize the recent results in hydrogen passivation in silicon, including presenting comprehensive diffusion profiles, i.e., profiles in floating zone n-type and p-type silicon vs resistivity. Domination of hydrogen diffusion by impurity trapping is clearly indicated for part of the profile in low resistivity p-type Si. Also mentioned are the current models of hydrogen passivation of dangling bonds, shallow acceptors, shallow donors, and hyper-deep defects.

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Effect of energy band distortions on D/ mu in heavily doped n-type silicon

IEEE Transactions on Electron Devices ◽

10.1109/16.22485 ◽

1989 ◽

Vol 36 (4) ◽

pp. 768-770 ◽

Cited By ~ 1

Author(s):

S.K. Sharma

Keyword(s):

Energy Band ◽

Type Silicon ◽

Heavily Doped

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A Model for the High Temperature Transport Properties of Heavily Doped P-Type Silicon-Germanium Alloys

MRS Proceedings ◽

10.1557/proc-234-95 ◽

1991 ◽

Vol 234 ◽

Cited By ~ 9

Author(s):

Cronin B. Vining

Keyword(s):

High Temperature ◽

Transport Properties ◽

Silicon Germanium ◽

Phonon Scattering ◽

Impurity Scattering ◽

Long Wavelength ◽

Type Silicon ◽

Heavily Doped ◽

P Type ◽

Silicon Germanium Alloys

ABSTRACTA model is presented for the high temperature transport properties of large grain size, heavily doped p-type silicon-germanium alloys. Good agreement with experiment (±10%) is found by considering acoustic phonon and ionized impurity scattering for holes and phonon-phonon, point defect and hole-phonon scattering for phonons. Phonon scattering by holes is found to be substantially weaker than phonon scattering by electrons, which accounts for the larger thermal conductivity values of ptype silicon-germanium alloys compared to similarly doped n-type silicongermanium alloys. The relatively weak scattering of long-wavelength phonons by holes raises the possibility that p-type silicon-germanium alloys may be improved for thermoelectric applications by the addition of an additional phonon scattering mechanism which is effective on intermediate and long-wavelength phonons. Calculations indicate improvements in the thermoelectric figure of merit up to 40% may be possible by incorporating several volume percent of 20 Å radius inclusions into p-type silicon-germanium alloys.

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