Source/Drain Ion Implantation into Ultra-Thin-Single-Crystalline-Silicon-Layer of Separation by IMplanted OXygen (SIMOX) Wafers

1996 ◽  
Vol 35 (Part 1, No. 10) ◽  
pp. 5237-5241 ◽  
Author(s):  
Mitsutoshi Takahashi ◽  
Yutaka Sakakibara ◽  
Jyoji Nakata
Keyword(s):  
Ion Implantation ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Single Crystalline Silicon ◽  
Single Crystalline

Submicrometer Comb-Drive Actuators Fabricated on Thin Single Crystalline Silicon Layer

2009 ◽  
Vol 56 (4) ◽  
pp. 991-995 ◽  
Author(s):  
K. Takahashi ◽  
E. Bulgan ◽  
Y. Kanamori ◽  
K. Hane
Keyword(s):  
Crystalline Silicon ◽  
Silicon Layer ◽  
Single Crystalline Silicon ◽  
Comb Drive ◽  
Single Crystalline

Single-Crystalline Silicon Layer Transfer to a Flexible Substrate Using Wafer Bonding

2010 ◽  
Vol 39 (10) ◽  
pp. 2233-2236 ◽  
Author(s):  
Ki Yeol Byun ◽  
Isabelle Ferain ◽  
Scott Song ◽  
Susan Holl ◽  
Cindy Colinge
Keyword(s):  
Wafer Bonding ◽  
Crystalline Silicon ◽  
Flexible Substrate ◽  
Silicon Layer ◽  
Single Crystalline Silicon ◽  
Layer Transfer ◽  
Single Crystalline

scholarly journals Stress-strain engineering of single-crystalline silicon membranes by ion implantation: Towards direct-gap group-IV semiconductors

2021 ◽  
Vol 5 (12) ◽  
Author(s):  
Mateus G. Masteghin ◽  
Vivian Tong ◽  
Eleanor B. Schneider ◽  
Cameron C. L. Underwood ◽  
Tomas Peach ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Crystalline Silicon ◽  
Strain Engineering ◽  
Group Iv ◽  
Single Crystalline Silicon ◽  
Stress Strain ◽  
Single Crystalline ◽  
Group Iv Semiconductors ◽  
Silicon Membranes

Mechanical Reliability of a Segmented Silicon Layer on Ultra-Thin Polyimide Substrates

2007 ◽  
Vol 353-358 ◽  
pp. 2529-2532
Author(s):  
L. Wang ◽  
A. Xiao ◽  
K.M.B. Jansen ◽  
M. Bartek ◽  
T. Zoumpoulidis ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Flexible Substrate ◽  
Crack Opening ◽  
Fem Simulation ◽  
Silicon Layer ◽  
Single Crystalline Silicon ◽  
Mechanical Reliability ◽  
Single Crystalline ◽  
Interfacial Delamination ◽  
Substrate Transfer

Substrate transfer technology for SOI and non-SOI single-crystalline silicon wafers was demonstrated allowing for high-performance low-power RF applications. 3D deformable electronics could be realized by vertically thinning and laterally partitioning of the silicon substrate on sub-millimeter scale. By varying the partition dimensions and the geometry of connecting bridges, the level of acceptable deformations can be controlled. The targeted applications of this technology are wireless ID tags and sensor networks. The mechanical properties such as crack, interfacial delamination are critical to reach the flexible substrate. In this contribution, results of our work on mechanical reliability issues of poly- and single crystalline silicon on ultra-thin polyimide substrates are presented. To improve reliability, square and hexagonal segmentation with different size is applied to the silicon layer before it is transferred onto an ultra-thin polyimide substrate using wafer-to-wafer substrate transfer technique based on a temporary glass carrier. Generation of cracks within the silicon and dielectric layers is then studied under controlled bending and tensile loads. The formation of cracks is studied experimentally using specially for this purpose designed bending and tensile tools. Ultra-thin interfacial delamination are also focused in this work by experimental and FE simulation method. A new test setup is designed for mixed mode bending testing which has capacity to observation specimen and recording the crack length and crack opening by microscope. The critical energy release depended on mixed angle can be reach by combination experimental data with FEM simulation.

Modeling of Damage Accumulation during Ion Implantation into Single‐Crystalline Silicon

1997 ◽  
Vol 144 (4) ◽  
pp. 1495-1504 ◽  
Author(s):  
M. Posselt ◽  
B. Schmidt ◽  
C. S. Murthy ◽  
T. Feudel ◽  
K. Suzuki
Keyword(s):  
Ion Implantation ◽  
Damage Accumulation ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline
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