Modeling of Damage Accumulation during Ion Implantation into Single‐Crystalline Silicon

M. Posselt; B. Schmidt; C. S. Murthy; T. Feudel; K. Suzuki

doi:10.1149/1.1837618

Modeling of Damage Accumulation during Ion Implantation into Single‐Crystalline Silicon

Journal of The Electrochemical Society ◽

10.1149/1.1837618 ◽

1997 ◽

Vol 144 (4) ◽

pp. 1495-1504 ◽

Cited By ~ 52

Author(s):

M. Posselt ◽

B. Schmidt ◽

C. S. Murthy ◽

T. Feudel ◽

K. Suzuki

Keyword(s):

Ion Implantation ◽

Damage Accumulation ◽

Crystalline Silicon ◽

Single Crystalline Silicon ◽

Single Crystalline

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Shear stress enhanced fatigue damage accumulation in single crystalline silicon under cyclic mechanical loading

Sensors and Actuators A Physical ◽

10.1016/j.sna.2016.04.012 ◽

2016 ◽

Vol 244 ◽

pp. 314-323 ◽

Cited By ~ 4

Author(s):

Shoji Kamiya ◽

Arasu Udhayakumar ◽

Hayato Izumi ◽

Kozo Koiwa

Keyword(s):

Shear Stress ◽

Fatigue Damage ◽

Mechanical Loading ◽

Damage Accumulation ◽

Crystalline Silicon ◽

Single Crystalline Silicon ◽

Single Crystalline ◽

Fatigue Damage Accumulation

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Ion implantation-caused damage depth profiles in single-crystalline silicon studied by Spectroscopic Ellipsometry and Rutherford Backscattering Spectrometry

Vacuum ◽

10.1016/s0042-207x(98)00056-6 ◽

1998 ◽

Vol 50 (3-4) ◽

pp. 293-297 ◽

Cited By ~ 7

Author(s):

P Petrik ◽

O Polgár ◽

T Lohner ◽

M Fried ◽

NQ Khánh ◽

...

Keyword(s):

Ion Implantation ◽

Spectroscopic Ellipsometry ◽

Crystalline Silicon ◽

Rutherford Backscattering Spectrometry ◽

Rutherford Backscattering ◽

Single Crystalline Silicon ◽

Single Crystalline ◽

Depth Profiles ◽

Damage Depth

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J2240305 Effect of stress ratio on fatigue damage accumulation process in single crystalline silicon

The Proceedings of Mechanical Engineering Congress Japan ◽

10.1299/jsmemecj.2014._j2240305- ◽

2014 ◽

Vol 2014 (0) ◽

pp. _J2240305--_J2240305-

Author(s):

Toshifumi KITA ◽

Hayato IZUMI ◽

Shoji KAMIYA ◽

Le Huy Vu

Keyword(s):

Fatigue Damage ◽

Damage Accumulation ◽

Stress Ratio ◽

Crystalline Silicon ◽

Accumulation Process ◽

Single Crystalline Silicon ◽

Single Crystalline ◽

Fatigue Damage Accumulation

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Advanced optical model for the ellipsometric study of ion implantation-caused damage depth profiles in single-crystalline silicon

2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) ◽

10.1109/iit.2000.924112 ◽

2003 ◽

Author(s):

P. Petrik ◽

O. Polgar ◽

M. Fried ◽

T. Lohner ◽

N.Q. Khanh ◽

...

Keyword(s):

Ion Implantation ◽

Optical Model ◽

Crystalline Silicon ◽

Single Crystalline Silicon ◽

Single Crystalline ◽

Depth Profiles ◽

Damage Depth ◽

Ellipsometric Study

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Stress-strain engineering of single-crystalline silicon membranes by ion implantation: Towards direct-gap group-IV semiconductors

Physical Review Materials ◽

10.1103/physrevmaterials.5.124603 ◽

2021 ◽

Vol 5 (12) ◽

Author(s):

Mateus G. Masteghin ◽

Vivian Tong ◽

Eleanor B. Schneider ◽

Cameron C. L. Underwood ◽

Tomas Peach ◽

...

Keyword(s):

Ion Implantation ◽

Crystalline Silicon ◽

Strain Engineering ◽

Group Iv ◽

Single Crystalline Silicon ◽

Stress Strain ◽

Single Crystalline ◽

Group Iv Semiconductors ◽

Silicon Membranes

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Source/Drain Ion Implantation into Ultra-Thin-Single-Crystalline-Silicon-Layer of Separation by IMplanted OXygen (SIMOX) Wafers

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.5237 ◽

1996 ◽

Vol 35 (Part 1, No. 10) ◽

pp. 5237-5241 ◽

Cited By ~ 3

Author(s):

Mitsutoshi Takahashi ◽

Yutaka Sakakibara ◽

Jyoji Nakata

Keyword(s):

Ion Implantation ◽

Crystalline Silicon ◽

Silicon Layer ◽

Single Crystalline Silicon ◽

Single Crystalline

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Comparative study of ion implantation caused damage depth profiles in polycrystalline and single crystalline silicon studied by spectroscopic ellipsometry and Rutherford backscattering spectrometry

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(98)00566-7 ◽

1999 ◽

Vol 147 (1-4) ◽

pp. 84-89 ◽

Cited By ~ 12

Author(s):

P. Petrik ◽

T. Lohner ◽

M. Fried ◽

N.Q. Khánh ◽

O. Polgár ◽

...

Keyword(s):

Ion Implantation ◽

Comparative Study ◽

Spectroscopic Ellipsometry ◽

Crystalline Silicon ◽

Rutherford Backscattering Spectrometry ◽

Rutherford Backscattering ◽

Single Crystalline Silicon ◽

Single Crystalline ◽

Depth Profiles ◽

Damage Depth

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Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

Ukrainian Journal of Physics ◽

10.15407/ujpe58.02.0142 ◽

2013 ◽

Vol 58 (2) ◽

pp. 142-150 ◽

Cited By ~ 1

Author(s):

A.V. Sachenko ◽

◽

V.P. Kostylev ◽

V.G. Litovchenko ◽

V.G. Popov ◽

...

Keyword(s):

Surface Layer ◽

Crystalline Silicon ◽

Silicon Wafers ◽

Single Crystalline Silicon ◽

Near Surface ◽

Single Crystalline

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In-plane-gate flexible single-crystalline silicon thin-film transistors with high-k gate dielectrics on plastic substrates

AIP Advances ◽

10.1063/1.5045521 ◽

2019 ◽

Vol 9 (1) ◽

pp. 015111 ◽

Cited By ~ 1

Author(s):

Yibo Zhang ◽

Shihui Yu ◽

Kuibo Lan ◽

Lingxia Li ◽

Guoxuan Qin

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Crystalline Silicon ◽

Gate Dielectrics ◽

Single Crystalline Silicon ◽

Silicon Thin Film ◽

Single Crystalline ◽

Plastic Substrates ◽

High K

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Particle Density of Pt Produced by Electroless Displacement Deposition on Single-crystalline Silicon

Journal of The Surface Finishing Society of Japan ◽

10.4139/sfj.65.495 ◽

2014 ◽

Vol 65 (10) ◽

pp. 495-498

Author(s):

Taizo HAGIHARA ◽

Takashi MATSUDA ◽

Naoki FUKUMURO ◽

Shinji YAE

Keyword(s):

Crystalline Silicon ◽

Particle Density ◽

Single Crystalline Silicon ◽

Single Crystalline ◽

Displacement Deposition

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