Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth

1998 ◽  
Vol 37 (Part 1, No. 12A) ◽  
pp. 6569-6574 ◽  
Author(s):  
Munehisa Tamura ◽  
Takashi Kojima ◽  
Toshikazu Ando ◽  
Nobuhiro Nunoya ◽  
Shigeo Tamura ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Vapor Phase ◽  
Chemical Etching ◽  
Quantum Well Lasers ◽  
Epitaxial Regrowth ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Recombination Velocity ◽  
Metallic Vapor

scholarly journals Fabrication of Novel III-N and III-V Modulator Structures by ECR Plasma Etching

1995 ◽  
Vol 405 ◽  
Author(s):  
S. J. Pearton ◽  
C. R. Abernathy ◽  
J. D. MacKenzie ◽  
J. R. Mileham ◽  
R. J Shul ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Plasma Etching ◽  
Chemical Etching ◽  
High Surface ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Ecr Plasma ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Recombination Velocity

AbstractQuantum well microdisk laser structures have been fabricated in the GaN/InGaN, GaAs/AlGaAs and GaAs/InGaP systems using a combination of ECR dry etching (Cl2/CH4/H2/Ar, BC13/Ar or CH4/H2/Ar plasma chemistries respectively) and subsequent wet chemical etching of a buffer layer underlying the quantum wells. While wet etchants such as HF/H2O and HCI/HNO3/H2O are employed for AlGaAs and InGaP, respectively, a new KOH-based solution has been developed for AlN which is completely selective over both GaN and InGaN. Typical mask materials include PR or SiNx, while the high surface recombination velocity of exposed AlGaAs (∼105cm·sec-1) requires encapsulation with ECR-CVD SiNx to stabilize the optical properties of the modulators.

Photoluminescence from freestanding GaN with (1010) orientation

2003 ◽  
Vol 798 ◽  
Author(s):  
M. A. Reshchikov ◽  
A. Teke ◽  
H. P. Maruska ◽  
D. W. Hill ◽  
H. Morkoç
Keyword(s):  
Vapor Phase ◽  
Chemical Etching ◽  
Shallow Donor ◽  
Excitation Intensity ◽  
Structural Defects ◽  
Subsequent Removal ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Pl Spectrum ◽  
Lattice Matched

ABSTRACTFreestanding GaN templates with (1010) orientation (M-plane) were obtained by halide vapor phase epitaxy (HVPE) on nearly lattice-matched LiAlO2and subsequent removal of the substrate by wet chemical etching. Photoluminescence (PL) spectrum from both sides of the GaN template investigated is dominated by peaks at 3.47, 3.42 and 3.36 eV, tentatively attributed to an exciton bound to the neutral shallow donor and two unidentified structural defects, respectively. The quantum efficiency of the exciton-related emission exceeds 10%, whereas that of the combined emission from the defect-related bands (red, yellow and blue) is below 0.1%. The evolution of the PL spectrum with temperature and excitation intensity is analyzed in detail. Effects of polishing and etching on the PL properties are also discussed.

Fabrication of Quantum Wires by Wet Etching Techniques

1993 ◽  
Vol 325 ◽  
Author(s):  
H. W. Yang ◽  
S. F. Horng ◽  
H. L. Hwang
Keyword(s):  
Quantum Well ◽  
Electron Beam Lithography ◽  
Quantum Confinement ◽  
Chemical Etching ◽  
Quantum Wires ◽  
Blue Shift ◽  
Wet Etching ◽  
Photoluminescence Excitation ◽  
Wet Chemical ◽  
Wet Chemical Etching

AbstractQuantum Wires Structures Were Fabricated By Patterning Quantum Well Samples With Electron Beam Lithography And Various Wet Chemical Etching Procedures. Wire Structures With 800Å Wire Width Were Achieved By Wet Etching In Nh4Oh / H2O2 / H2O (20:7:973). These Samples Were Characterized By Scanning Electron Microscopy (Sem), Photoluminescence (Pl), And Polarization-Dependent Photoluminescence Excitation (Ple) Measurements. The Pl Spectra Show Significantly Strongpr Peaks Than That Taken From An En-Etched Quantum Well Sample. A Wire Width Of 400Å Was Estimated From The Blue Shift Of Pl Peaks. A 22% Anisotropy Was Observed From Polarization-Dependent Ple Spectra, Further Corroborating The Existence Of Two-Dimensional Quantum Confinement.

Decapsulation Techniques for Cu Wire Bonding Package

2009 ◽  
Author(s):  
Dongmei Meng ◽  
Joe Rupley ◽  
Chris McMahon
Keyword(s):  
Laser Ablation ◽  
Thin Layer ◽  
Chemical Etching ◽  
Wire Bonding ◽  
Methods And Techniques ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Reliability Issue ◽  
Etch Time ◽  
Device Technology

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.

scholarly journals Controlling the Facet of ZnO during Wet Chemical Etching Its (0001) O‐Terminated Surface

Small ◽  
2020 ◽  
Vol 16 (51) ◽  
pp. 2007045
Author(s):  
Mei Sun ◽  
Bocheng Yu ◽  
Mengyu Hong ◽  
Zhiwei Li ◽  
Fengjiao Lyu ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching

scholarly journals In Situ Study of the Wet Chemical Etching of SiO2 and Nanoparticle@SiO2 Core–Shell Nanospheres

2021 ◽  
Author(s):  
Albert Grau-Carbonell ◽  
Sina Sadighikia ◽  
Tom A. J. Welling ◽  
Relinde J. A. van Dijk-Moes ◽  
Ramakrishna Kotni ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Core Shell ◽  
In Situ Study ◽  
Wet Chemical ◽  
Wet Chemical Etching
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