High Efficiency Secondary Electron Detection for the Electron-Beam-Reducing Projection Lithography System

1999 ◽  
Vol 38 (Part 1, No. 12A) ◽  
pp. 6931-6935
Author(s):  
Mamoru Nakasuji ◽  
Hiroyasu Shimizu
2008 ◽  
Vol 85 (8) ◽  
pp. 1786-1791 ◽  
Author(s):  
S. Tanimoto ◽  
D.S. Pickard ◽  
C. Kenney ◽  
R.F.W. Pease

Author(s):  
Oliver C. Wells

The conventional low-loss electron detector (1,2) is shown in Fig. 1. The electron beam strikes the specimen with a glancing angle of typically between 30° and 45°. The input grid G1 is held at +200V. The filter grid G2 is held at +200V to collect secondary electrons or at -19.8kV for low-loss work with an incident beam energy of 20keV. The scintillator is held at +10kV for secondary electron detection or at -10kV for low-loss work. Comparison pairs of micrographs are obtained by recording one image in each mode. The signalto- noise ratio is approximately the same in each case.We are proposing to replace the single scintillator/light-pipe/photomultiplier system with a pair of such assemblies separated by a partition, such that an input electron will reach one or other of the scintillators, depending on which part of the input aperture it enters. The video waveform will be obtained using a sum-or-difference unit connected to the two photomultipliers.


Author(s):  
Vadim Sidorkin ◽  
Chang Wook Moon ◽  
Bourim El Mostafa ◽  
Seung Woon Lee ◽  
In Keyong Yoo

Author(s):  
Kokoro Kato ◽  
Kuninori Nishizawa ◽  
Tamae Haruki ◽  
Tadao Inoue ◽  
Koichi Kamijo ◽  
...  

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