Direct Current Heating Induced Giant Step Bunching and Wandering on Si(111) and (001) Vicinal Surfaces

1999 ◽  
Vol 38 (Part 2, No. 3B) ◽  
pp. L308-L311 ◽  
Author(s):  
Masashi Degawa ◽  
Hozumi Nishimura ◽  
Yasumasa Tanishiro ◽  
Hiroki Minoda ◽  
Katsumichi Yagi
Keyword(s):  
Direct Current ◽  
Vicinal Surfaces ◽  
Step Bunching ◽  
Giant Step

scholarly journals Scaling laws for step bunching on vicinal surfaces: Role of the dynamical and chemical effects

2021 ◽  
Vol 104 (3) ◽  
Author(s):  
L. Benoit–Maréchal ◽  
M. E. Jabbour ◽  
N. Triantafyllidis
Keyword(s):  
Scaling Laws ◽  
Vicinal Surfaces ◽  
Step Bunching ◽  
Chemical Effects

Giant step bunching on SrTiO3 thin films grown epitaxially on vicinal MgO (1 0 0) surfaces

2021 ◽  
Vol 570 ◽  
pp. 151266
Author(s):  
Azza Hadj Youssef ◽  
Gitanjali Kolhatkar ◽  
Ifeanyichukwu C. Amaechi ◽  
Rajesh Katoch ◽  
Yoandris González ◽  
...  
Keyword(s):  
Thin Films ◽  
Step Bunching ◽  
Giant Step

scholarly journals Unification of step bunching phenomena on vicinal surfaces

2007 ◽  
Vol 76 (3) ◽  
Author(s):  
Pak-Wing Fok ◽  
Rodolfo R. Rosales ◽  
Dionisios Margetis
Keyword(s):  
Vicinal Surfaces ◽  
Step Bunching

scholarly journals Step-bunching transitions on vicinal surfaces with attractive step interactions

2000 ◽  
Vol 467 (1-3) ◽  
pp. 58-84 ◽  
Author(s):  
V.B. Shenoy ◽  
Shiwei Zhang ◽  
W.F. Saam
Keyword(s):  
Vicinal Surfaces ◽  
Step Bunching

Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces

2001 ◽  
Vol 227-228 ◽  
pp. 46-50 ◽  
Author(s):  
S Martini ◽  
A.A Quivy ◽  
D Ugarte ◽  
C Lange ◽  
W Richter ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Vicinal Surfaces ◽  
Step Bunching

Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces

2010 ◽  
Vol 645-648 ◽  
pp. 543-546 ◽  
Author(s):  
Yuuki Ishida ◽  
Tetsuo Takahashi ◽  
Hajime Okumura ◽  
Kazuo Arai ◽  
Sadafumi Yoshida
Keyword(s):  
Thermal Decomposition ◽  
Chemical Reaction ◽  
Experimental Verification ◽  
Reaction Model ◽  
Carbon Clusters ◽  
Cluster Effect ◽  
Step Bunching ◽  
Giant Step ◽  
Chemical Reaction Model

In this study, we investigated the cluster effect on the occurrence of giant step bunching. We generated carbon clusters on 4H-SiC (0001) surfaces by thermal decomposition of SiC in an Ar atmosphere and controlled the surface concentrations of the clusters by adding H2 gas. We found the boundaries between surfaces with and without giant steps to show Arrhenius-type behavior. This behavior agreed with our predictions deduced from a chemical reaction model that takes the cluster effect into account, suggesting that giant step bunching is attributable to the formation of clusters on SiC.

Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer

2014 ◽  
Vol 778-780 ◽  
pp. 222-225 ◽  
Author(s):  
Yuuki Ishida ◽  
Sadafumi Yoshida
Keyword(s):  
Epitaxial Layer ◽  
Generation Mechanism ◽  
Simulation Studies ◽  
Step Bunching ◽  
Giant Step

Trapezoid-shape (T-S) defects on epilayer surfaces, which include two kinds of the giant step bunching (GSB), are one of killer defects for MOSFETs. We have investigated the generation mechanism of the two GSBs using "step kinetics simulator" we developed. The simulator has reproduced the behavior of the GSBs. Based on results from the simulation, we have discussed the generation mechanism of the two GSBs.

High-Temperature MBE Growth of Si-Direct Current Heating Effects on (111) and (001) Vicinal Surfaces

1993 ◽  
Vol 32 (Part 1, No. 5A) ◽  
pp. 2047-2051 ◽  
Author(s):  
Stoyan S. Stoyanov ◽  
Masakazu Ichikawa ◽  
Takahisa Doi
Keyword(s):  
High Temperature ◽  
Direct Current ◽  
Vicinal Surfaces ◽  
Mbe Growth ◽  
Heating Effects
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