Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer

2014 ◽  
Vol 778-780 ◽  
pp. 222-225 ◽  
Author(s):  
Yuuki Ishida ◽  
Sadafumi Yoshida
Keyword(s):  
Epitaxial Layer ◽  
Generation Mechanism ◽  
Simulation Studies ◽  
Step Bunching ◽  
Giant Step

Trapezoid-shape (T-S) defects on epilayer surfaces, which include two kinds of the giant step bunching (GSB), are one of killer defects for MOSFETs. We have investigated the generation mechanism of the two GSBs using "step kinetics simulator" we developed. The simulator has reproduced the behavior of the GSBs. Based on results from the simulation, we have discussed the generation mechanism of the two GSBs.

Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect

2014 ◽  
Vol 778-780 ◽  
pp. 183-186 ◽  
Author(s):  
Yuuki Ishida ◽  
Sadafumi Yoshida
Keyword(s):  
Computer Simulation ◽  
Epitaxial Growth ◽  
Threshold Value ◽  
Wavy Surface ◽  
Cluster Effect ◽  
Simulation Studies ◽  
Flux Rate ◽  
Step Bunching ◽  
Giant Step

We have developed the computer simulation including cluster effect and Schwoebel effect and investigated the conditions generating GSB using the simulation. We have demonstrated that the simulation developed can reproduce GSB. We have found for the occurence of GSB that there exists a threshold value of the surplus flux rate of Si-or C-source gases not contributing to growth, which depends on the flux rate of each source gas, namely the boundary between with and without GSB. It is noted that this boundary does not depend on the off-angle of substrates. We have also found the mechanism for explaining the occurrence of wavy surface morphplogy.

Wide (0001) terrace formation due to step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface

2017 ◽  
Vol 122 (7) ◽  
pp. 075702 ◽  
Author(s):  
Yuki Tabuchi ◽  
Koji Ashida ◽  
Masashi Sonoda ◽  
Tadaaki Kaneko ◽  
Noboru Ohtani ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Layer Surface ◽  
Step Bunching

Giant step bunching on SrTiO3 thin films grown epitaxially on vicinal MgO (1 0 0) surfaces

2021 ◽  
Vol 570 ◽  
pp. 151266
Author(s):  
Azza Hadj Youssef ◽  
Gitanjali Kolhatkar ◽  
Ifeanyichukwu C. Amaechi ◽  
Rajesh Katoch ◽  
Yoandris González ◽  
...  
Keyword(s):  
Thin Films ◽  
Step Bunching ◽  
Giant Step

Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces

2010 ◽  
Vol 645-648 ◽  
pp. 543-546 ◽  
Author(s):  
Yuuki Ishida ◽  
Tetsuo Takahashi ◽  
Hajime Okumura ◽  
Kazuo Arai ◽  
Sadafumi Yoshida
Keyword(s):  
Thermal Decomposition ◽  
Chemical Reaction ◽  
Experimental Verification ◽  
Reaction Model ◽  
Carbon Clusters ◽  
Cluster Effect ◽  
Step Bunching ◽  
Giant Step ◽  
Chemical Reaction Model

In this study, we investigated the cluster effect on the occurrence of giant step bunching. We generated carbon clusters on 4H-SiC (0001) surfaces by thermal decomposition of SiC in an Ar atmosphere and controlled the surface concentrations of the clusters by adding H2 gas. We found the boundaries between surfaces with and without giant steps to show Arrhenius-type behavior. This behavior agreed with our predictions deduced from a chemical reaction model that takes the cluster effect into account, suggesting that giant step bunching is attributable to the formation of clusters on SiC.

Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces

2008 ◽  
Vol 600-603 ◽  
pp. 473-476 ◽  
Author(s):  
Yuuki Ishida ◽  
Tetsuo Takahashi ◽  
Hajime Okumura ◽  
Kazuo Arai ◽  
Sadafumi Yoshida
Keyword(s):  
Epitaxial Growth ◽  
Hydrogen Etching ◽  
Step Bunching ◽  
Giant Step ◽  
Cluster Generation

To elucidate the origin of giant step bunching on 4˚ off-axis 4H-SiC (0001) faces, we carried out hydrogen etching and epitaxial growth under various conditions. We found that giant step bunching occurs during hydrogen etching and epitaxial growth at extremely low or high C/Si ratios, i.e., with an excessive supply of SiH4 or C3H8. From these results, we have proposed that the origins of giant step bunching are asymmetry in the step kinetics in etching and Si or C cluster generation on terraces during growth.

SEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial Layers

2017 ◽  
Vol 897 ◽  
pp. 205-208
Author(s):  
Yuki Tabuchi ◽  
Masashi Sonoda ◽  
Koji Ashida ◽  
Tadaaki Kaneko ◽  
Noboru Ohtani ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Formation Mechanism ◽  
Low Voltage ◽  
Imaging Study ◽  
Layer Surface ◽  
Step Bunching ◽  
Electron Channeling ◽  
Voltage Electron ◽  
Electron Scanning Microscopy ◽  
Atomically Flat

Step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface was investigated using low-voltage electron scanning microscopy (LVSEM) and electron channeling contrast (ECC) imaging. LVSEM observations revealed that the step bunching resulted in the formation of atomically flat wide (~250 nm) terraces on the surface, and the terraces tended to form in pairs. The two terraces in paired terraces often showed the same electron channeling contrast as each other, and the contrast of the two terraces, either bright or dark, appeared to be determined by the orthogonal misorientation of substrates. On the basis of these results, the formation mechanism of the step-bunched structure on a vicinal 4H-SiC (0001) surface is discussed.

Starting Point of Step-Bunching Defects on 4H-SiC Si-Face Substrates

2015 ◽  
Vol 821-823 ◽  
pp. 367-370 ◽  
Author(s):  
Kentaro Tamura ◽  
Masayuki Sasaki ◽  
Chiaki Kudou ◽  
Tamotsu Yamashita ◽  
Hideki Sako ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Epitaxial Layer ◽  
Basal Plane ◽  
X Ray ◽  
Step Bunching ◽  
Line Feature ◽  
Starting Point ◽  
Basal Plane Dislocation ◽  
Koh Etching

On 4H-SiC Si-face substrates after H2etching, the defect with “line” feature parallel to a step as “bunched-step line” was observed. Using X-ray topography and KOH etching, we confirmed that the bunched-step line originated from basal plane dislocation (BPD). Use of the substrate with the lowest BPD density will be effective to reduce bunched-step line that would affect oxide layer reliability on an epitaxial layer. However, more detail investigation needs to classify the BPD that would become a starting point of bunched-step line.

Direct Current Heating Induced Giant Step Bunching and Wandering on Si(111) and (001) Vicinal Surfaces

1999 ◽  
Vol 38 (Part 2, No. 3B) ◽  
pp. L308-L311 ◽  
Author(s):  
Masashi Degawa ◽  
Hozumi Nishimura ◽  
Yasumasa Tanishiro ◽  
Hiroki Minoda ◽  
Katsumichi Yagi
Keyword(s):  
Direct Current ◽  
Vicinal Surfaces ◽  
Step Bunching ◽  
Giant Step

Giant step bunching in epitaxial SrRuO3 films on vicinal SrTiO3(001)

2006 ◽  
Vol 495 (1-2) ◽  
pp. 159-164 ◽  
Author(s):  
F. Sánchez ◽  
G. Herranz ◽  
C. Ferrater ◽  
M.V. García-Cuenca ◽  
M. Varela ◽  
...  
Keyword(s):  
Step Bunching ◽  
Giant Step
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