Influence of InxGa1-xAs (0≤x≤0.3) Cap Layer on Structural and Optical Properties of Self-assembled InAs/GaAs Quantum Dots

2000 ◽  
Vol 39 (Part 1, No. 9A) ◽  
pp. 5076-5079 ◽  
Author(s):  
Xiao Dong Wang ◽  
Zhichuan Niu ◽  
Songlin Feng
2012 ◽  
Vol 571 ◽  
pp. 269-272
Author(s):  
Peng Tian ◽  
Chong Qing Huang ◽  
Wen Hua Luo ◽  
Jing Liu

Self-assembled InAs/GaAs quantum dots structures with low temperature and high temperature cap layers are grown by meta-organic chemical vapor deposition. The effects of Indium composition of high temperature InGaAs cap layer on the structural and optical properties of quantum dots are investigated by the atomic force microscopy and photoluminescence. Emission peak wavelengths shift from 1218 nm to 1321 nm when the Indium composition of high temperature InGaAs cap layer increase form 0 to 0.17.


2000 ◽  
Vol 88 (6) ◽  
pp. 3392-3395 ◽  
Author(s):  
H. Y. Liu ◽  
X. D. Wang ◽  
J. Wu ◽  
B. Xu ◽  
Y. Q. Wei ◽  
...  

2002 ◽  
Vol 81 (7) ◽  
pp. 1195-1197 ◽  
Author(s):  
Fariba Ferdos ◽  
Shumin Wang ◽  
Yongqiang Wei ◽  
Anders Larsson ◽  
Mahdad Sadeghi ◽  
...  

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