In Situ Monitoring of GaN Reactive Ion Etching by Optical Emission Spectroscopy

2001 ◽  
Vol 40 (Part 2, No. 4A) ◽  
pp. L313-L315 ◽  
Author(s):  
Harumasa Yoshida ◽  
Tatsuhiro Urushido ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Reactive Ion Etching ◽  
Optical Emission ◽  
In Situ Monitoring ◽  
Ion Etching

Effect of Ge in Cl2 Plasma for Reactive Ion Etching of GaN

2001 ◽  
Vol 693 ◽  
Author(s):  
Tatsuhiro Urushido ◽  
Harumasa Yoshida ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu
Keyword(s):  
Rough Surface ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Reactive Ion Etching ◽  
Optical Emission ◽  
High Energy ◽  
Quartz Plate ◽  
Ion Etching ◽  
Optical Emissions ◽  
Etched Surface

AbstractWe investigated the effect of Ge and Si in Cl2 plasma on reactive ion etching (RIE) of GaN. The etched surfaces of GaN were smooth, and high etch rates of 0.63 m/min and 0.41 m m/min were obtained using a Ge plate and a Si plate, respectively. A rough surface was formed for the quartz plate without the Ge plate or Si plate. Optical emission spectroscopy revealed optical emissions related to GeClx+ions in Cl2 plasma with the Ge plate, to SiClx+ ions with the Si plate and to Cl+ ions without the Ge or the Si plate. It is considered that the GeClx+ions and SiClx+ ions for RIE of GaN plays an important role in obtaining a smooth etched surface of GaN, and that the high-energy Cl+ ion severely damages the GaN surface.

Sign in / Sign up

Export Citation Format

Share Document