Fully Quantum-Mechanical Calculation of Gate Tunneling Current in Ultrathin Silicon-on-Insulator Metal-Oxide-Semiconductor Devices

Hideyuki Iwata

doi:10.1143/jjap.40.l600

Fully Quantum-Mechanical Calculation of Gate Tunneling Current in Ultrathin Silicon-on-Insulator Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.l600 ◽

2001 ◽

Vol 40 (Part 2, No. 6B) ◽

pp. L600-L602

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Quantum Mechanical Calculation ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Calculation ◽

Gate Tunneling

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Fully Quantum-Mechanical Calculation of Hole Direct Tunneling Current in Ultrathin Gate Oxide p-Channel Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.552 ◽

2002 ◽

Vol 41 (Part 1, No. 2A) ◽

pp. 552-556 ◽

Cited By ~ 3

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Gate Oxide ◽

Quantum Mechanical Calculation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Calculation ◽

Direct Tunneling Current

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Quantum-Mechanical Simulation of Gate Tunneling Current in Accumulated n-Channel Metal-Oxide-Semiconductor Devices with n+-Polysilicon Gates

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.5094 ◽

2002 ◽

Vol 41 (Part 1, No. 8) ◽

pp. 5094-5097 ◽

Cited By ~ 1

Author(s):

Hideyuki Iwata ◽

Toshihiro Matsuda ◽

Takashi Ohzone

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Simulation ◽

Gate Tunneling

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Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

Applied Physics Letters ◽

10.1063/1.4968824 ◽

2016 ◽

Vol 109 (22) ◽

pp. 223104 ◽

Cited By ~ 10

Author(s):

Yanbin An ◽

Aniruddh Shekhawat ◽

Ashkan Behnam ◽

Eric Pop ◽

Ant Ural

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Capacitance ◽

Gate Electrodes ◽

Gate Tunneling

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Fully Quantum-Mechanical Modeling of Tunneling Current in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.4496 ◽

2001 ◽

Vol 40 (Part 1, No. 7) ◽

pp. 4496-4500 ◽

Cited By ~ 8

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Modeling

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Quantum mechanical study of trapped charge relaxation characteristics in metal-oxide-semiconductor devices

Proceedings of IEEE. IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure' (Cat. No.99CH37030) ◽

10.1109/tencon.1999.818624 ◽

2003 ◽

Author(s):

Q.D. Mohd Khosru ◽

Md. Nasir Uddin ◽

M. Rezwan Khan

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Charge Relaxation ◽

Mechanical Study ◽

Quantum Mechanical Study ◽

Relaxation Characteristics ◽

Trapped Charge

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Evaluation and Resolution for Nonideal Characteristics of Complementary Metal–Oxide–Semiconductor Devices Fabricated on Silicon-on-Insulator

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.4408 ◽

2008 ◽

Vol 47 (6) ◽

pp. 4408-4412

Author(s):

Seongjae Cho ◽

Il Han Park ◽

Jung Hoon Lee ◽

Jong Duk Lee ◽

Byung-Gook Park

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Image Force Effect on Tunneling Current for Ultra Thin High-K Dielectric Material Al2O3 Based Metal Oxide Semiconductor Devices

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2015.1812 ◽

2015 ◽

Vol 10 (5) ◽

pp. 645-648 ◽

Cited By ~ 16

Author(s):

N. P. Maity ◽

R. Maity ◽

R. K. Thapa ◽

S. Baishya

Keyword(s):

Metal Oxide ◽

Dielectric Material ◽

Semiconductor Devices ◽

Tunneling Current ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Force Effect ◽

High K ◽

High K Dielectric

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Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor

Acta Physica Sinica ◽

10.7498/aps.60.027305 ◽

2011 ◽

Vol 60 (2) ◽

pp. 027305

Author(s):

Wu Tie-Feng ◽

Zhang He-Ming ◽

Wang Guan-Yu ◽

Hu Hui-Yong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Predicting Model ◽

Effect Transistor ◽

Gate Tunneling

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Quantum Mechanical Determination of the Potential and Carrier Distributions in the Inversion Layer of Metal-Oxide-Semiconductor Devices

10.1515/9783112472927-012 ◽

1979 ◽

pp. 129-142

Author(s):

C. T. Hsing ◽

D. P. Kennedy ◽

A. D. Sutherland ◽

K. M. van Vliet

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical

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Ultra shallow and abrupt n+–p junction formations on silicon-on-insulator by solid phase diffusion of arsenic from spin-on-dopant for sub 50nm Si metal-oxide-semiconductor devices

Materials Science and Engineering B ◽

10.1016/j.mseb.2004.03.016 ◽

2004 ◽

Vol 110 (2) ◽

pp. 185-189 ◽

Cited By ~ 7

Author(s):

Jihun Oh ◽

Kiju Im ◽

Chang-Geun Ahn ◽

Jong-Heon Yang ◽

Won-ju Cho ◽

...

Keyword(s):

Metal Oxide ◽

Solid Phase ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Phase Diffusion

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