Image Force Effect on Tunneling Current for Ultra Thin High-K Dielectric Material Al2O3 Based Metal Oxide Semiconductor Devices

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2015.1812 ◽

2015 ◽

Vol 10 (5) ◽

pp. 645-648 ◽

Author(s):

N. P. Maity ◽

R. Maity ◽

R. K. Thapa ◽

S. Baishya

Keyword(s):

Metal Oxide ◽

Dielectric Material ◽

Semiconductor Devices ◽

Tunneling Current ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Force Effect ◽

High K ◽

High K Dielectric

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Impact of native defects in high-k dielectric oxides on GaN/oxide metal-oxide-semiconductor devices

physica status solidi (b) ◽

10.1002/pssb.201200628 ◽

2013 ◽

Vol 250 (4) ◽

pp. 787-791 ◽

Author(s):

Minseok Choi ◽

John L. Lyons ◽

Anderson Janotti ◽

Chris G. Van de Walle

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Native Defects ◽

High K ◽

High K Dielectric

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Metal-Oxide-Semiconductor Devices on GaAs with High-k Dielectric and MOCVD Grown ZnO Interface Passivation Layer

2011 International Conference on Nanoscience, Technology and Societal Implications ◽

10.1109/nstsi.2011.6111800 ◽

2011 ◽

Author(s):

Souvik Kundu ◽

Pallab Banerji

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

High K ◽

High K Dielectric ◽

Interface Passivation

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The influence of image force effect on the accuracy of modeling of tunneling current for ultra thin high- k dielectric material Ta 2 O 5 based MOS devices

Materials Today Proceedings ◽

10.1016/j.matpr.2018.04.065 ◽

2018 ◽

Vol 5 (7) ◽

pp. 15104-15109 ◽

Author(s):

N.P. Maity ◽

Reshmi Maity ◽

S. Baishya

Keyword(s):

Dielectric Material ◽

Tunneling Current ◽

Image Force ◽

Force Effect ◽

Mos Devices ◽

High K ◽

High K Dielectric

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Effect of Image Force on Tunneling Current for Ultra Thin Oxide Layer Based Metal Oxide Semiconductor Devices

Nanoscience and Nanotechnology Letters ◽

10.1166/nnl.2015.1970 ◽

2015 ◽

Vol 7 (4) ◽

pp. 331-333 ◽

Author(s):

N. P. Maity ◽

R. Maity ◽

R. K. Thapa ◽

S. Baishya

Keyword(s):

Metal Oxide ◽

Oxide Layer ◽

Semiconductor Devices ◽

Tunneling Current ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Oxide Layer ◽

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Low temperature atomic layer deposition of high-k dielectric stacks for scaled metal-oxide-semiconductor devices

Thin Solid Films ◽

10.1016/j.tsf.2009.03.190 ◽

2009 ◽

Vol 517 (18) ◽

pp. 5543-5547 ◽

Author(s):

Ole Bethge ◽

Stephan Abermann ◽

Christoph Henkel ◽

Emmerich Bertagnolli

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

High K ◽

High K Dielectric

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The Effect of Electron Incident Angle on Transmittance and Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor with High-K Dielectric Gate Stack

10.1063/1.3537898 ◽

2010 ◽

Author(s):

Fatimah A. Noor ◽

Yudi Darma ◽

Mikrajuddin Abdullah ◽

Khairurrijal ◽

Khairurrijal ◽

...

Keyword(s):

Metal Oxide ◽

Incident Angle ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

High K Dielectric ◽

Metal Oxide Semiconductor Capacitor ◽

Anisotropic Metal

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Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159330 ◽

2009 ◽

Author(s):

Hock-Chun Chin ◽

Xinke Liu ◽

Leng-Seow Tan ◽

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Cmos Compatible ◽

High K Dielectric

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Mismatch of dielectric constants at the interface of nanometer metal-oxide-semiconductor devices with high-K gate dielectric impacts on the inversion charge density

Pramana ◽

10.1007/s12043-011-0052-0 ◽

2011 ◽

Vol 76 (4) ◽

pp. 657-666 ◽

Author(s):

LING-FENG MAO

Keyword(s):

Metal Oxide ◽

Charge Density ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Dielectric Constants ◽

Oxide Semiconductor ◽

High K ◽

Inversion Charge ◽

High K Gate Dielectric

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Impact of the crystallization of the high-k dielectric gate oxide on the positive bias temperature instability of the n-channel metal-oxide-semiconductor field emission transistor

Applied Physics Letters ◽

10.1063/1.4811274 ◽

2013 ◽

Vol 102 (23) ◽

pp. 232909 ◽

Author(s):

Han Jin Lim ◽

Youngkuk Kim ◽

In Sang Jeon ◽

Jaehyun Yeo ◽

Badro Im ◽

...

Keyword(s):

Metal Oxide ◽

Field Emission ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

High K Dielectric

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Role of ultra thin pseudomorphic InP layer to improve the high-k dielectric/GaAs interface in realizing metal-oxide-semiconductor capacitor

Journal of Applied Physics ◽

10.1063/1.4745896 ◽

2012 ◽

Vol 112 (3) ◽

pp. 034514 ◽

Author(s):

Souvik Kundu ◽

Nripendra N. Halder ◽

D. Biswas ◽

P. Banerji ◽

T. Shripathi ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

High K Dielectric ◽

Metal Oxide Semiconductor Capacitor

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