Quantum-Mechanical Simulation of Counter Doped Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Single Work Function Metal Gate

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.6337 ◽

2002 ◽

Vol 41 (Part 1, No. 11A) ◽

pp. 6337-6341

Author(s):

Hideyuki Iwata ◽

Toshihiro Matsuda ◽

Takashi Ohzone

Keyword(s):

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Simulation

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Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function

Journal of Applied Physics ◽

10.1063/1.2838234 ◽

2008 ◽

Vol 103 (6) ◽

pp. 064510 ◽

Author(s):

Youn Sung Choi ◽

Toshinori Numata ◽

Toshikazu Nishida ◽

Rusty Harris ◽

Scott E. Thompson

Keyword(s):

Metal Oxide ◽

Work Function ◽

Mechanical Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

P Type ◽

Gate Work Function

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Hot Carrier ◽

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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Applied Physics Letters ◽

10.1063/1.2189456 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132107 ◽

Author(s):

A. Ritenour ◽

A. Khakifirooz ◽

D. A. Antoniadis ◽

R. Z. Lei ◽

W. Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

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Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks

Applied Physics Letters ◽

10.1063/1.4773914 ◽

2013 ◽

Vol 102 (1) ◽

pp. 012106 ◽

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Bin-Wei Wang ◽

Ying-Shin Lu ◽

Wen-Hung Lo ◽

...

Keyword(s):

Metal Oxide ◽

High Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

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Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159330 ◽

2009 ◽

Author(s):

Hock-Chun Chin ◽

Xinke Liu ◽

Leng-Seow Tan ◽

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Cmos Compatible ◽

High K Dielectric

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In-Situ Surface Passivation and Metal-Gate/High-κDielectric Stack Formation for N-channel Gallium Arsenide Metal-Oxide-Semiconductor Field-Effect Transistors

2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ◽

10.1109/vtsa.2008.4530782 ◽

2008 ◽

Author(s):

Hock-Chun Chin ◽

Ming Zhu ◽

Sung-Jin Whang ◽

Chih-Hang Tung ◽

Ganesh S. Samudra ◽

...

Keyword(s):

Gallium Arsenide ◽

Metal Oxide ◽

Field Effect ◽

Surface Passivation ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.061503 ◽

2011 ◽

Vol 50 (6R) ◽

pp. 061503 ◽

Author(s):

Ryosuke Iijima ◽

Lisa F. Edge ◽

John Bruley ◽

Vamsi Paruchuri ◽

Mariko Takayanagi

Keyword(s):

Metal Oxide ◽

Crystal Orientation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Substrates ◽

High K ◽

Orientation Difference

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Investigation of Positive and Negative Bias Temperature Instability of High-κ Dielectric Metal Gate Metal–Oxide–Semiconductor-Field-Effect-Transistors by Random Telegraph Signal

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.036503 ◽

2013 ◽

Vol 52 (3R) ◽

pp. 036503 ◽

Author(s):

Da-Cheng Huang ◽

Jeng Gong ◽

Chih-Fang Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Impact of Correlation on Gate Capacitance Variability Due to Random Dopant Fluctuation and Work-Function Variation in Nanometer Metal-Oxide-Semiconductor-Field-Effect-Transistors

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2019.2644 ◽

2019 ◽

Vol 14 (7) ◽

pp. 1037-1041

Author(s):

Wei-Feng Lü ◽

Liang Dai ◽

Guang-Yi Wang ◽

Mi Lin

Keyword(s):

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Dopant Fluctuation ◽

Gate Capacitance ◽

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High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2High-kDielectric and Metal Gate

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c055 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C055 ◽

Author(s):

Jungwoo Oh ◽

Prashant Majhi ◽

Chang Yong Kang ◽

Raj Jammy ◽

Raymond Joe ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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