Impact of Correlation on Gate Capacitance Variability Due to Random Dopant Fluctuation and Work-Function Variation in Nanometer Metal-Oxide-Semiconductor-Field-Effect-Transistors

Oxide Semiconductor ◽

Gate Capacitance ◽

Investigation of Random Dopant Fluctuation for Multi-Gate Metal–Oxide–Semiconductor Field-Effect Transistors Using Analytical Solutions of Three-Dimensional Poisson's Equation

10.1143/jjap.47.2097 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2097-2102

Author(s):

Yu-Sheng Wu ◽

Pin Su

Keyword(s):

Metal Oxide ◽

Analytical Solutions ◽

Field Effect ◽

Three Dimensional ◽

Oxide Semiconductor ◽

Poisson's Equation ◽

Consideration of Random Dopant Fluctuation Models for Accurate Prediction of Threshold Voltage Variation of Metal–Oxide–Semiconductor Field-Effect Transistors in 45 nm Technology and Beyond

10.1143/jjap.48.044502 ◽

2009 ◽

Vol 48 (4) ◽

pp. 044502 ◽

Cited By ~ 18

Author(s):

Arifin Tamsir Putra ◽

Akio Nishida ◽

Shiro Kamohara ◽

Takaaki Tsunomura ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Accurate Prediction ◽

Oxide Semiconductor ◽

Voltage Variation ◽

Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors

AIP Advances ◽

10.1063/1.5034041 ◽

2018 ◽

Vol 8 (7) ◽

pp. 075203

Author(s):

Hyeon-Bhin Jo ◽

Jung-Ho Park ◽

Seung-Woo Son ◽

Ji-Min Baek ◽

Do-Young Yun ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Physical Investigation ◽

Gate Capacitance

Effect of Random Dopant Fluctuation Depending on the Ion Implantation for the Metal-Oxide-Semiconductor Field Effect Transistor

Journal of IKEEE ◽

10.7471/ikeee.2017.21.1.96 ◽

2017 ◽

Vol 21 (1) ◽

pp. 96-99

Author(s):

Jae Hyun Park ◽

Tae-sig Chang ◽

Minsuk Kim ◽

Sola Woo ◽

Sangsig Kim

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Quantum-Mechanical Simulation of Counter Doped Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Single Work Function Metal Gate

10.1143/jjap.41.6337 ◽

2002 ◽

Vol 41 (Part 1, No. 11A) ◽

pp. 6337-6341

Author(s):

Hideyuki Iwata ◽

Toshihiro Matsuda ◽

Takashi Ohzone

Keyword(s):

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Metal Gate ◽

Mechanical Simulation

Physical origin and characteristics of gate capacitance in silicon metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.367271 ◽

1998 ◽

Vol 83 (9) ◽

pp. 4788-4796 ◽

Cited By ~ 9

Author(s):

Yasuyuki Nakajima ◽

Seiji Horiguchi ◽

Masanari Shoji ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Physical Origin ◽

Gate Capacitance

Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.1406980 ◽

2001 ◽

Vol 79 (14) ◽

pp. 2267-2269 ◽

Cited By ~ 27

Author(s):

Nobuyuki Sano ◽

Masaaki Tomizawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Three Dimensional ◽

Oxide Semiconductor ◽

Drift Diffusion ◽

Identification of Fixed and Interface Trap Charges in Hot-Carrier Stressed Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) through Ultraviolet Light Anneal and Gate Capacitance Measurements

10.1143/jjap.34.l101 ◽

1995 ◽

Vol 34 (Part 2, No. 1B) ◽

pp. L101-L104 ◽

Cited By ~ 1

Author(s):

C. H. Ling

Keyword(s):

Metal Oxide ◽

Ultraviolet Light ◽

Field Effect ◽

Oxide Semiconductor ◽

Interface Trap ◽

Hot Carrier ◽

Capacitance Measurements ◽

Gate Capacitance

Silicon Complementary Metal–Oxide–Semiconductor Field-Effect Transistors with Dual Work Function Gate

10.1143/jjap.45.9033 ◽

2006 ◽

Vol 45 (12) ◽

pp. 9033-9036 ◽

Cited By ~ 46

Author(s):

Kee-Yeol Na ◽

Yeong-Seuk Kim

Keyword(s):

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Complementary Metal Oxide Semiconductor ◽

Oxide Semiconductor

Work function variation of nickel silicide using an ytterbium buffer layer for Schottky barrier metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2734882 ◽

2007 ◽

Vol 101 (10) ◽

pp. 103710 ◽

Cited By ~ 10

Author(s):

Won-Jae Lee ◽

Do-Woo Kim ◽

Soon-Young Oh ◽

Yong-Jin Kim ◽

Ying-Ying Zhang ◽

...

Keyword(s):

Metal Oxide ◽

Work Function ◽

Schottky Barrier ◽

Buffer Layer ◽

Field Effect ◽

Nickel Silicide ◽

Oxide Semiconductor ◽

Barrier Metal