Effect of Post-treatment on Electrical Properties of Amorphous Hydrogenated Carbon Films Deposited by Gridless Ion Beam Deposition

2003 ◽  
Vol 42 (Part 1, No. 1) ◽  
pp. 259-262
Author(s):  
Chia-Fu Chen ◽  
Yan-Way Li ◽  
Hsiu-Ling Huang
Keyword(s):  
Electrical Properties ◽  
Ion Beam ◽  
Carbon Films ◽  
Post Treatment ◽  
Ion Beam Deposition ◽  
Amorphous Hydrogenated Carbon ◽  
Beam Deposition

Direct ion-beam deposition of amorphous hydrogenated carbon films

1991 ◽  
Vol 47 (1-3) ◽  
pp. 426-432 ◽  
Author(s):  
R. Locher ◽  
C. Wild ◽  
P. Koidl
Keyword(s):  
Ion Beam ◽  
Carbon Films ◽  
Ion Beam Deposition ◽  
Amorphous Hydrogenated Carbon ◽  
Beam Deposition

Ion beam deposition of amorphous hydrogenated carbon films on amorphous silicon interlayer: Experiment and simulation

2011 ◽  
Vol 20 (5-6) ◽  
pp. 693-702 ◽  
Author(s):  
A. Ibenskas ◽  
A. Galdikas ◽  
Š. Meškinis ◽  
M. Andrulevičius ◽  
S. Tamulevičius
Keyword(s):  
Amorphous Silicon ◽  
Ion Beam ◽  
Carbon Films ◽  
Ion Beam Deposition ◽  
Experiment And Simulation ◽  
Amorphous Hydrogenated Carbon ◽  
Beam Deposition

The influence of substrate temperature during ion beam deposition on the diamond-like or graphitic nature of carbon films

1993 ◽  
Vol 2 (2-4) ◽  
pp. 285-290 ◽  
Author(s):  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
I. Avigal ◽  
C. Uzan-Saguy ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Carbon Films ◽  
Ion Beam Deposition ◽  
Influence Of Substrate ◽  
Beam Deposition

Structure, Optical and Electrical Properties of Pulsed Laser Deposited and Ion Beam Deposited CNx Films

1997 ◽  
Vol 498 ◽  
Author(s):  
K. F. Chan ◽  
X.-A. Zhao ◽  
C. W. Ong
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Film Structure ◽  
Laser Deposition ◽  
Optical And Electrical Properties ◽  
Ion Beam Deposition ◽  
Valence Bands ◽  
Beam Deposition

ABSTRACTCNx films were deposited using pulsed laser deposition (PLD) and ion beam deposition (IBD). The PLD films deposited at substrate temperature Ts = 25°C and high N2 partial pressure have the highest N content (fN) and polymerlike structure, accompanied by large band gap (Eg) and low electrical conductivity (σroom). The rise in Ts lowers fN and induces graphitization of the film structure, so Eg reduces and σroom increases. IBD (with and without N2+ assist) films are graphitic. Higher Ts further enhances the graphitization of the film structure, such that the conduction and valence bands overlap, and σroom approaches to that of graphite. No evidence was found to show successful formation of the hypothetical β-C3N4 phase in the films.

Growth of diamond and diamond-like films using a low energy ion beam

1998 ◽  
Vol 13 (8) ◽  
pp. 2315-2320 ◽  
Author(s):  
Y. P. Guo ◽  
K. L. Lam ◽  
K. M. Lui ◽  
R. W. M. Kwok ◽  
K. C. Hui
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Low Energy ◽  
Hydrogen Passivation ◽  
Heteroepitaxial Growth ◽  
Ion Beam Deposition ◽  
Additional Control ◽  
Strain Release ◽  
Beam Deposition

Ion beam deposition provides an additional control of ion beam energy over the chemical vapor deposition methods. We have used a low energy ion beam of hydrogen and carbon to deposit carbon films on Si(100) wafers. We found that graphitic films, amorphous carbon films, and oriented diamond microcrystallites could be obtained separatedly at different ion beam energies. The mechanism of the formation of the oriented diamond microcrystallites was suggested to include three components: strain release after ion bombardment, hydrogen passivation of sp3 carbon, and hydrogen etching. Such a process can be extended to the heteroepitaxial growth of diamond films.

Preparation of diamondlike carbon films by high‐intensity pulsed‐ion‐beam deposition

1994 ◽  
Vol 76 (10) ◽  
pp. 5949-5954 ◽  
Author(s):  
Gregory P. Johnston ◽  
Prabhat Tiwari ◽  
Donald J. Rej ◽  
Harold A. Davis ◽  
William J. Waganaar ◽  
...  
Keyword(s):  
High Intensity ◽  
Ion Beam ◽  
Carbon Films ◽  
Ion Beam Deposition ◽  
Diamondlike Carbon ◽  
Beam Deposition

Direct ion beam deposition of carbon films on silicon in the ion energy range of 15–500 eV

1991 ◽  
Vol 70 (10) ◽  
pp. 5623-5628 ◽  
Author(s):  
W. M. Lau ◽  
I. Bello ◽  
X. Feng ◽  
L. J. Huang ◽  
Qin Fuguang ◽  
...  
Keyword(s):  
Energy Range ◽  
Ion Beam ◽  
Carbon Films ◽  
Ion Energy ◽  
Ion Beam Deposition ◽  
Beam Deposition

Ion Beam Deposition of Amorphous Carbon Films With Diamond Like Properties

1981 ◽  
Vol 7 ◽  
Author(s):  
John C. Angus ◽  
Michael J. Mirtich ◽  
Edwin G. Wintucky
Keyword(s):  
Amorphous Carbon ◽  
Growth Rates ◽  
Random Network ◽  
Ion Beam ◽  
Potassium Bromide ◽  
Carbon Films ◽  
Amorphous Carbon Films ◽  
Ion Beam Deposition ◽  
Beam Deposition

ABSTRACTCarbon films were deposited on silicon, quartz, and potassium bromide substrates from an ion beam. Growth rates were approximately 0.3 μm/hour. The films were featureless and amorphous and contained only carbon and hydrogen in significant amounts. The density and carbon/hydrogen ratio indicate the film is a hydrogen deficient polymer. One possible structure, consistent with the data, is a random network of methylene linkages and tetrahedrally coordinated carbon atoms.

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