Characterization of Hafnium Oxide Thin Films by Source Gas Pulse Introduced Metalorganic Chemical Vapor Deposition Using Amino-Family Hf Precursors

2003 ◽  
Vol 42 (Part 1, No. 9B) ◽  
pp. 6015-6018 ◽  
Author(s):  
Shiro Hino ◽  
Makoto Nakayama ◽  
Kenji Takahashi ◽  
Hiroshi Funakubo ◽  
Eisuke Tokumitsu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hafnium Oxide ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Thin Films ◽  
Metalorganic Chemical

Preparation and characterization of single crystalline anatase TiO2 films on LSAT (001) by MOCVD

RSC Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 4867-4871 ◽  
Author(s):  
Mingxian Wang ◽  
Weiguang Wang ◽  
Zhao Li ◽  
Xuejian Du ◽  
Xianjin Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Anatase Tio2 ◽  
Tio2 Films ◽  
Anatase Structure ◽  
Metalorganic Chemical

TiO2 thin films with anatase structure have been prepared on [LaAlO3]0.3[SrAl0.5Ta0.5O3]0.7 (LSAT) (001) substrates by metalorganic chemical vapor deposition (MOCVD) in the substrate temperature range of 500–650 °C.

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