Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth

Rate Profile

Study on the surface reaction kinetics of InGaAs related materials MOCVD through analyses of growth rate distribution in the selective area growth

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205399 ◽

2003 ◽

Author(s):

H.J. Oh ◽

I.T. Im ◽

M. Sugiyama ◽

Y. Nakaro ◽

Y. Shimogaki

Keyword(s):

Growth Rate ◽

Reaction Kinetics ◽

Surface Reaction ◽

Selective Area Growth ◽

Rate Distribution ◽

Selective Area ◽

Area Growth ◽

Growth Rate Distribution ◽

Surface Reaction Kinetics of InP and InAs Metalorganic Vapor Phase Epitaxy Analyzed by Selective Area Growth Technique

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.7788 ◽

2008 ◽

Vol 47 (10) ◽

pp. 7788-7792 ◽

Cited By ~ 2

Author(s):

Yunpeng Wang ◽

Haizheng Song ◽

Masakazu Sugiyama ◽

Yoshiaki Nakano ◽

Yukihiro Shimogaki

Keyword(s):

Reaction Kinetics ◽

Vapor Phase ◽

Surface Reaction ◽

Metalorganic Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Growth Technique ◽

Selective Area ◽

Area Growth ◽

Non-linear Surface Reaction Kinetics of GaAs MOVPE Explored by Selective Area Growth

ECS Transactions ◽

10.1149/1.2408910 ◽

2019 ◽

Vol 2 (7) ◽

pp. 145-156

Author(s):

Haizheng Song ◽

M. Sugiyama ◽

Yoshiaki Nakano ◽

Yukihiro Shimogaki

Keyword(s):

Reaction Kinetics ◽

Surface Reaction ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth ◽

Non Linear ◽

Non-linear Surface Reaction Kinetics of GaAs MOVPE Explored by Selective Area Growth

ECS Meeting Abstracts ◽

10.1149/ma2006-01/23/798 ◽

2006 ◽

Keyword(s):

Reaction Kinetics ◽

Surface Reaction ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth ◽

Non Linear ◽

Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy

Thin Solid Films ◽

10.1016/j.tsf.2020.138125 ◽

2020 ◽

Vol 709 ◽

pp. 138125

Author(s):

Pattana Suwanyangyaun ◽

Sakuntam Sanorpim ◽

Kentaro Onabe

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth ◽

Cubic Gan

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

Crystal Growth & Design ◽

10.1021/acs.cgd.1c00518 ◽

2021 ◽

Author(s):

Gabin Grégoire ◽

Mohammed Zeghouane ◽

Curtis Goosney ◽

Nebile Isik Goktas ◽

Philipp Staudinger ◽

...

Keyword(s):

Optical Properties ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Nanowire Arrays ◽

Hydride Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Optimization of selective area growth of GaAs by low pressure organometallic vapor phase epitaxy for monolithic integrated circuits

Journal of Electronic Materials ◽

10.1007/bf02655263 ◽

1994 ◽

Vol 23 (2) ◽

pp. 159-166 ◽

Cited By ~ 2

Author(s):

H. Kanber ◽

S. X. Bar ◽

P. E. Norris ◽

C. Beckham ◽

M. Pacer

Keyword(s):

Integrated Circuits ◽

Vapor Phase ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Organometallic Vapor Phase Epitaxy ◽

Selective Area ◽

Monolithic Integrated Circuits ◽

InGaAlAs selective-area growth on an InP substrate by metalorganic vapor phase epitaxy

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205438 ◽

2003 ◽

Cited By ~ 1

Author(s):

T. Tsuchiya ◽

J. Shimizu ◽

M. Shirai ◽

M. Aoki

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Inp Substrate ◽

Selective Area Growth by Metal Organic Vapor Phase Epitaxy and Atomic Layer Epitaxy Using Ga2O3as a Novel Mask Layer

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.1516 ◽

1999 ◽

Vol 38 (Part 1, No. 3A) ◽

pp. 1516-1520 ◽

Cited By ~ 5

Author(s):

Shingo Hirose ◽

Akihiro Yoshida ◽

Masaaki Yamaura ◽

Kazuhiko Hara ◽

Hiro Munekata

Keyword(s):

Vapor Phase ◽

Atomic Layer ◽

Vapor Phase Epitaxy ◽

Atomic Layer Epitaxy ◽

Selective Area Growth ◽

Organic Vapor ◽

Mask Layer ◽

Selective Area ◽

Area Growth ◽

Metal Organic

Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy

Crystal Growth & Design ◽

10.1021/acs.cgd.9b01346 ◽

2020 ◽

Vol 20 (4) ◽

pp. 2232-2239 ◽

Cited By ~ 1

Author(s):

Mohammed Zeghouane ◽

Geoffrey Avit ◽

Yamina André ◽

Thierry Taliercio ◽

Pierre Ferret ◽

...

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Hydride Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Morphological Control ◽

Selective Area ◽