scholarly journals High breakdown voltage lateral AlGaN/GaN high electron mobility transistor with p-GaN islands buried buffer layer for power applications

2017 ◽  
Vol 66 (24) ◽  
pp. 247302
Author(s):  
Zhang Li ◽  
Lin Zhi-Yu ◽  
Luo Jun ◽  
Wang Shu-Long ◽  
Zhang Jin-Cheng ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Breakdown Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
High Breakdown Voltage

A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage

2019 ◽  
Vol 7 (39) ◽  
pp. 12075-12079 ◽  
Author(s):  
Dingbo Chen ◽  
Zhikun Liu ◽  
Jinghan Liang ◽  
Lijun Wan ◽  
Zhuoliang Xie ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
High Breakdown Voltage

This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT).

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer
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