Metal-Organic Chemical Vapor Deposition of HfO2by Alternating Supply of Tetrakis-Diethylamino-Hafnium and Remote-Plasma Oxygen

2004 ◽  
Vol 43 (10) ◽  
pp. 6963-6967 ◽  
Author(s):  
Sadayoshi Horii ◽  
Kazuhiko Yamamoto ◽  
Masayuki Asai ◽  
Hironobu Miya ◽  
Isao Kaneko ◽  
...  
1999 ◽  
Vol 567 ◽  
Author(s):  
D. Wolfe ◽  
K. Flock ◽  
R. Therrien ◽  
R. Johnson ◽  
B. Rayner ◽  
...  

ABSTRACTA remote plasma enhanced-metal organic chemical vapor deposition (RPE-MOCVD) process was developed for the preparation of non-crystalline (ZrO2)x-(SiO2)1−x (x ≤ 0.5) alloys, targeting the compound composition ZrSiO4with k ∼ 12.5. Shifts in Si LVV and Zr LMM AES energies with respect to elemental values showed that the deposited film was a fully-oxidized zirconium/silicon alloy. FTIR results were consistent with AES, and a Zr-O-Si bonding mode was identified in the spectra. The films were amorphous before and after RTA at 900°C for 30 sec, as monitored via RHEED. Optical absorption measurements indicated the onset of band-to-band transitions at an energy of approximately 6 eV. Finally, C-V testing showed that the films were insulating.


1998 ◽  
Vol 37 (Part 1, No. 12A) ◽  
pp. 6502-6505 ◽  
Author(s):  
Kwang-Nam Cho ◽  
Chang-Hee Han ◽  
Kyung-Bong Noh ◽  
Jae-Eung Oh ◽  
Su-Hyoun Paek ◽  
...  

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