Development and Analysis of a High-Pressure Micro Jet Pad Conditioning System for Interlayer Dielectric Chemical Mechanical Planarization

2005 ◽  
Vol 44 (3) ◽  
pp. 1225-1231 ◽  
Author(s):  
Yoshiyuki Seike ◽  
Darren DeNardis ◽  
Masano Sugiyama ◽  
Keiji Miyachi ◽  
Toshiro Doi ◽  
...  
2006 ◽  
Vol 153 (3) ◽  
pp. G223 ◽  
Author(s):  
Yoshiyuki Seike ◽  
Hyo-sang Lee ◽  
Mineo Takaoka ◽  
Keiji Miyachi ◽  
Masahiko Amari ◽  
...  

2004 ◽  
Vol 816 ◽  
Author(s):  
Kwang-Bok Kim ◽  
Hyo-Jin Lee ◽  
Ki-Hoon Jang ◽  
Joung-Duk Ko ◽  
Kyung-Hyun Kim ◽  
...  

AbstractCMP(Chemical Mechanical Planarization) process is widely used to reduce step height in semiconductor fabrication processes. As a design rule shrinks, a highly planar surface becomes inevitable within wafer scales. In order to get a high degree of a planarization, self-stopping characteristics of a ceria-based slurry should be studied and used in semiconductor process. In this study, threshold polishing pressure for a self-stopping characteristics was obtained by optimizing down pressure, pad conditioning, and mixing ratio of ceria abrasive and additive. A series of experiments were made to optimize the threshold polishing pressure in variable line & space patterns that consist of 0.8um step height and unit oxide film. As a result, self-stopping cmp process is twice batter than conventional silica-based process with respect to planarity and WIWNU. In addition, WIWNU and step height was dramatically decreased to less than 1000Å when applying to real fabrication devices over 2um step height.


2003 ◽  
Vol 767 ◽  
Author(s):  
Jesse Cornely ◽  
Chris Rogers ◽  
Vincent Manno ◽  
Ara Philipossian

AbstractThis paper presents temperature and friction force data at the pad-slurry-wafer interface during real time CMP polishing with in situ pad conditioning. Experiments are performed on a 1:2 scale laboratory tabletop rotary polisher with variable pad speed and wafer down force control. Dual emission laser induced fluorescence (DELIF) techniques are used to optically measure the temperature directly beneath the wafer during polishing using a two camera imaging system. An infrared camera and a thermocouple are alternately used to measure bow wave temperatures. Optically transparent BK-7 glass wafers with either concave (wafer edges sloping toward the pad) or convex (wafer edges sloping away from the pad) curvature were used. When concave wafers are polished, the bow wave temperatures are 3°C to 5°C higher than the corresponding value for convex wafers. Similarly, slurry temperatures under the concave wafers are 5°C to 6°C higher than the value for convex wafers (±0.5°C). The friction force per unit area is typically 2 kPa to 3 kPa higher for concave wafers. Temperatures beneath the wafer are as high as 12°C above the ambient temperature for a concave wafer at a high applied wafer pressure (41.4 kPa) or linear velocity (0.93 m/sec). Bow wave temperatures reach as high as 9°C above ambient at a linear velocity of 0.93 m/sec. The lowest temperatures, within 1°C of ambient at the bow wave and 5°C above ambient under the wafer, were found with convex wafers at low applied wafer pressures (20.7 kPa). Linear velocity has little effect on the slurry temperature while polishing convex wafers. Increasing slurry abrasive concentration causes an increase in temperature, despite a decrease in friction force. A correlation, with an R-squared value greater than 0.96, exists between the bow wave temperature and the temperature beneath the wafer. This correlation holds at constant linear velocities across wafer shapes, applied wafer pressures, and slurry concentrations.


2007 ◽  
Vol 8 (1) ◽  
pp. 26-31 ◽  
Author(s):  
Hyo-Sang Lee ◽  
Darren DeNardis ◽  
Ara Philipossian ◽  
Yoshiyuki Seike ◽  
Mineo Takaoka ◽  
...  

2013 ◽  
Vol 52 (1R) ◽  
pp. 018001 ◽  
Author(s):  
Xiaoyan Liao ◽  
Yun Zhuang ◽  
Leonard J. Borucki ◽  
Jiang Cheng ◽  
Siannie Theng ◽  
...  

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