Electrical Properties of Germanium Oxynitride and Its Interface with Germanium Prepared by Electron-Cyclotron-Resonance Plasma Oxidation and Nitridation

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.7351 ◽

2006 ◽

Vol 45 (9B) ◽

pp. 7351-7353 ◽

Author(s):

Yukio Fukuda ◽

Koji Kato ◽

Hiroshi Toyota ◽

Toshiro Ono ◽

Yoshitaka Nagasato ◽

...

Keyword(s):

Electrical Properties ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Plasma Oxidation ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Structural and electrical properties of thin microcrystalline silicon films deposited by an electron cyclotron resonance plasma discharge of 2% SiH4/Ar further diluted in H2

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581481 ◽

1998 ◽

Vol 16 (5) ◽

pp. 2751-2756 ◽

Author(s):

B. B. Jagannathan ◽

R. L. Wallace ◽

W. A. Anderson

Keyword(s):

Electrical Properties ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Plasma Discharge ◽

Electron Cyclotron ◽

Silicon Films ◽

Microcrystalline Silicon ◽

Electron Cyclotron Resonance Plasma ◽

Structural And Electrical Properties ◽

Resonance Plasma

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Induction of octacalcium phosphate by surface modification of TiO2 film prepared by electron cyclotron resonance plasma oxidation

Interface Oral Health Science 2007 ◽

10.1007/978-4-431-76690-2_69 ◽

2008 ◽

pp. 317-321

Author(s):

Yusuke Orii ◽

Hiroshi Masumoto ◽

Takashi Goto ◽

Yoshitomo Honda ◽

Takahisa Anada ◽

...

Keyword(s):

Surface Modification ◽

Tio2 Film ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Octacalcium Phosphate ◽

Electron Cyclotron ◽

Plasma Oxidation ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Electrical properties of electron cyclotron resonance plasma-deposited silicon dioxide: effect of the oxygen to silane flow ratio

Semiconductor Science and Technology ◽

10.1088/0268-1242/11/3/023 ◽

1996 ◽

Vol 11 (3) ◽

pp. 422-426 ◽

Author(s):

M J Hernandez ◽

J Garrido ◽

J Martinez ◽

J Piqueras

Keyword(s):

Electrical Properties ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma

Journal of Applied Physics ◽

10.1063/1.349264 ◽

1991 ◽

Vol 70 (6) ◽

pp. 3301-3313 ◽

Author(s):

D. A. Carl ◽

D. W. Hess ◽

M. A. Lieberman ◽

T. D. Nguyen ◽

R. Gronsky

Keyword(s):

Electrical Properties ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Dc Bias ◽

Resonance Plasma

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Electrical properties of GaAs selectively grown by electron cyclotron resonance plasma‐excited molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.105221 ◽

1991 ◽

Vol 58 (6) ◽

pp. 604-606 ◽

Author(s):

Norio Yamamoto ◽

Naoto Kondo ◽

Yasushi Nanishi

Keyword(s):

Electrical Properties ◽

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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A kinetics study of the electron cyclotron resonance plasma oxidation of silicon

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586421 ◽

1992 ◽

Vol 10 (2) ◽

pp. 611 ◽

Author(s):

J. Joseph

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Kinetics Study ◽

Plasma Oxidation ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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$\bf TiO_{2}$ Thin Films Formed by Electron Cyclotron Resonance Plasma Oxidation at High Temperature and Their Application to Capacitor Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l1248 ◽

1994 ◽

Vol 33 (Part 2, No. 9A) ◽

pp. L1248-L1250 ◽

Author(s):

Yoshio Abe ◽

Takuya Fukuda

Keyword(s):

High Temperature ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Plasma Oxidation ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Electron cyclotron resonance plasma oxidation studies of InP

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587035 ◽

1994 ◽

Vol 12 (2) ◽

pp. 540 ◽

Author(s):

Y. Z. Hu

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Plasma Oxidation ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Electrical properties of low-temperature epitaxial doped Si thin films fabricated by using a sputtering-type electron cyclotron resonance plasma

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/34/7/301 ◽

2001 ◽

Vol 34 (7) ◽

pp. 1025-1031

Author(s):

Junli Wang ◽

Hiroshi Nakashima ◽

Junsi Gao ◽

Katsunori Muraoka

Keyword(s):

Electrical Properties ◽

Low Temperature ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Insituspectroscopic ellipsometry study of the electron cyclotron resonance plasma oxidation of silicon and interfacial damage

Applied Physics Letters ◽

10.1063/1.105306 ◽

1991 ◽

Vol 59 (11) ◽

pp. 1353-1355 ◽

Author(s):

Y. Z. Hu ◽

J. Joseph ◽

E. A. Irene

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Plasma Oxidation ◽

Interfacial Damage ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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