Electrical properties of electron cyclotron resonance plasma-deposited silicon dioxide: effect of the oxygen to silane flow ratio

1996 ◽  
Vol 11 (3) ◽  
pp. 422-426 ◽  
Author(s):  
M J Hernandez ◽  
J Garrido ◽  
J Martinez ◽  
J Piqueras
Keyword(s):  
Electrical Properties ◽  
Silicon Dioxide ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Flow Ratio ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma

Effects of deposition temperature on the electrical properties of electron cyclotron resonance plasma-enhanced chemical vapor deposition Ta2O5 film and the formation of interfacial SiO2

1995 ◽  
Vol 10 (11) ◽  
pp. 2864-2869 ◽  
Author(s):  
Il Kim ◽  
Jong-Seok Kim ◽  
Bok-Won Cho ◽  
Sung-Duck Ahn ◽  
John S. Chun ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Cyclotron Resonance ◽  
Deposition Temperature ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Cross Sectional ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma

High-quality Ta2O5 thin films for high-density memory devices were prepared at low temperatures by electron cyclotron resonance plasma-enhanced chemical vapor depostion (ECR-PECVD) without postannealing treatment. The effects of deposition temperature on the microstructure, composition, and electrical properties of the dielectric films were studied. The increase in deposition temperature from 145 °C to 205 °C improved the stoichiometry of the Ta2O5 thin films. As a consequence, EBD increased from 3.3 MV/cm to 4.4 MV/cm, and ∊Ta2O5, increased from 14 to 25. Interfacial SiO2 layer was observed by cross-sectional TEM, and its effects on the electrical properties of the overall dielectric film were also studied. The incubation period in which interfacial SiO2 grows was discussed with regard to reactivity between oxygen and Si substrate.

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