Electrical properties of low-temperature epitaxial doped Si thin films fabricated by using a sputtering-type electron cyclotron resonance plasma
2001 ◽
Vol 34
(7)
◽
pp. 1025-1031
1995 ◽
Vol 10
(11)
◽
pp. 2864-2869
◽
1994 ◽
Vol 12
(5)
◽
pp. 3010
◽
1997 ◽
Vol 15
(4)
◽
pp. 1951-1954
◽
1999 ◽
Vol 2
(6)
◽
pp. 291
◽
1998 ◽
Vol 16
(5)
◽
pp. 2751-2756
◽
1998 ◽
Vol 317
(1-2)
◽
pp. 116-119
◽
1996 ◽
Vol 11
(3)
◽
pp. 422-426
◽
1990 ◽
Vol 29
(Part 2, No. 7)
◽
pp. L1181-L1184
◽