Structural Characterization of Polycrystalline 3C–SiC Films Prepared at High Rates by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Monomethylsilane

2006 ◽  
Vol 45 (10B) ◽  
pp. 8381-8387 ◽  
Author(s):  
Hiroaki Kakiuchi ◽  
Hiromasa Ohmi ◽  
Ryota Nakamura ◽  
Masatoshi Aketa ◽  
Kiyoshi Yasutake
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