Defect-free growth of epitaxial silicon at low temperatures (500–800 °C) by atmospheric pressure plasma chemical vapor deposition
2007 ◽
Vol 46
(4B)
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pp. 2510-2515
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2006 ◽
2003 ◽
Vol 444
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pp. 138-145
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2006 ◽
Vol 45
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pp. 3592-3597
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2013 ◽
Vol 31
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pp. 061508
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2000 ◽
Vol 71
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pp. 3173-3177
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2005 ◽
Vol 351
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pp. 741-747
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