Defect-free growth of epitaxial silicon at low temperatures (500–800 °C) by atmospheric pressure plasma chemical vapor deposition

2005 ◽  
Vol 81 (6) ◽  
pp. 1139-1144 ◽  
Author(s):  
K. Yasutake ◽  
H. Kakiuchi ◽  
H. Ohmi ◽  
K. Yoshii ◽  
Y. Mori
Sign in / Sign up

Export Citation Format

Share Document