High-Rate Deposition of Amorphous SiC Films by Atmospheric Pressure Plasma Chemical Vapor Deposition. (1st Report). Examination of Deposition Rate and Film Structure.

Yuzo MORI; Hiroaki KAKIUCHI; Kumayasu YOSHII; Kiyoshi YASUTAKE

doi:10.2493/jjspe.66.907

High-Rate Deposition of Amorphous SiC Films by Atmospheric Pressure Plasma Chemical Vapor Deposition. (1st Report). Examination of Deposition Rate and Film Structure.

Journal of the Japan Society for Precision Engineering ◽

10.2493/jjspe.66.907 ◽

2000 ◽

Vol 66 (6) ◽

pp. 907-911

Author(s):

Yuzo MORI ◽

Hiroaki KAKIUCHI ◽

Kumayasu YOSHII ◽

Kiyoshi YASUTAKE

Keyword(s):

Vapor Deposition ◽

Atmospheric Pressure ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

Film Structure ◽

High Rate ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Amorphous Sic ◽

Sic Films

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High-Rate Deposition of Amorphous SiC Films by Atmospheric Pressure Plasma Chemical Vapor Deposition (2nd Report)

Journal of the Japan Society for Precision Engineering Contributed Papers ◽

10.2493/jspe.70.1075 ◽

2004 ◽

Vol 70 (8) ◽

pp. 1075-1079

Author(s):

Hiroaki KAKIUCHI ◽

Hiromasa OHMI ◽

Koichi NAKAZAWA ◽

Kiyoshi YASUTAKE ◽

Kumayasu YOSHII ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

High Rate ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Amorphous Sic ◽

Sic Films

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Effect of hydrogen on the structure of high-rate deposited SiC on Si by atmospheric pressure plasma chemical vapor deposition using high-power-density condition

Thin Solid Films ◽

10.1016/j.tsf.2005.08.338 ◽

2006 ◽

Vol 496 (2) ◽

pp. 259-265 ◽

Cited By ~ 11

Author(s):

H. Kakiuchi ◽

H. Ohmi ◽

M. Aketa ◽

K. Yasutake ◽

K. Yoshii ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

High Rate ◽

High Power Density ◽

Density Condition ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

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High-Rate Deposition of Amorphous Silicon Films by Atmospheric-Pressure Plasma Chemical Vapor Deposition

Crystal Growth Technology ◽

10.1002/0470871687.ch29 ◽

2004 ◽

pp. 645-652 ◽

Cited By ~ 1

Author(s):

Yuzo Mori ◽

Hiroaki Kakiuchi ◽

Kumayasu Yoshii ◽

Kiyoshi Yasutake

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

High Rate ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Pressure Plasma

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Atmospheric pressure plasma chemical vapor deposition system for high-rate deposition of functional materials

Review of Scientific Instruments ◽

10.1063/1.1305510 ◽

2000 ◽

Vol 71 (8) ◽

pp. 3173-3177 ◽

Cited By ~ 45

Author(s):

Y. Mori ◽

K. Yoshii ◽

H. Kakiuchi ◽

K. Yasutake

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

Functional Materials ◽

High Rate ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Pressure Plasma

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Structural Characterization of Polycrystalline 3C–SiC Films Prepared at High Rates by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Monomethylsilane

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.8381 ◽

2006 ◽

Vol 45 (10B) ◽

pp. 8381-8387 ◽

Cited By ~ 5

Author(s):

Hiroaki Kakiuchi ◽

Hiromasa Ohmi ◽

Ryota Nakamura ◽

Masatoshi Aketa ◽

Kiyoshi Yasutake

Keyword(s):

Chemical Vapor Deposition ◽

Structural Characterization ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Sic Films

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Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition

Thin Solid Films ◽

10.1016/j.tsf.2004.11.104 ◽

2005 ◽

Vol 479 (1-2) ◽

pp. 17-23 ◽

Cited By ~ 31

Author(s):

H. Kakiuchi ◽

Y. Nakahama ◽

H. Ohmi ◽

K. Yasutake ◽

K. Yoshii ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

High Rate ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Silicon Nitride Films

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High-Rate Deposition of Amorphous Silicon Thin Films by Atmospheric Pressure Plasma Chemical Vapor Deposition. (1st Report). Design and Production of the Atmospheric Pressure Plasma CVD Apparatus with Rotary Electrode.

Journal of the Japan Society for Precision Engineering ◽

10.2493/jjspe.65.1600 ◽

1999 ◽

Vol 65 (11) ◽

pp. 1600-1604 ◽

Cited By ~ 2

Author(s):

Yuzo MORI ◽

Kumayasu YOSHII ◽

Kiyoshi YASUTAKE ◽

Hiroaki KAKIUCHI ◽

Seiichi KIYAMA ◽

...

Keyword(s):

Vapor Deposition ◽

Atmospheric Pressure ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

High Rate ◽

Plasma Cvd ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Pressure Plasma ◽

Silicon Thin Films

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High-rate Deposition of Amorphous Silicon Film by Atmospheric Pressure Plasma Chemical Vapor Deposition. (2nd Report). Investigation for Higher Deposition Rate.

Journal of the Japan Society for Precision Engineering ◽

10.2493/jjspe.66.1636 ◽

2000 ◽

Vol 66 (10) ◽

pp. 1636-1640

Author(s):

Yuzo MORI ◽

Kumayasu YOSHII ◽

Kiyoshi YASUTAKE ◽

Motohiro NAKANO ◽

Hiroaki KAKIUCHI ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Silicon Film ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

High Rate ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Amorphous Silicon Film

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High-rate growth of epitaxial silicon at low temperatures (530–690 °C) by atmospheric pressure plasma chemical vapor deposition

Thin Solid Films ◽

10.1016/s0040-6090(03)01148-9 ◽

2003 ◽

Vol 444 (1-2) ◽

pp. 138-145 ◽

Cited By ~ 18

Author(s):

Y. Mori ◽

K. Yoshii ◽

K. Yasutake ◽

H. Kakiuchi ◽

H. Ohmi ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Low Temperatures ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

High Rate ◽

Epitaxial Silicon ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

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Characterization of the near-surface gas-phase chemical environment in atmospheric-pressure plasma chemical vapor deposition of diamond

Diamond and Related Materials ◽

10.1016/s0925-9635(99)00143-0 ◽

1999 ◽

Vol 8 (10) ◽

pp. 1863-1874 ◽

Cited By ~ 12

Author(s):

J.M. Larson ◽

M.T. Swihart ◽

S.L. Girshick

Keyword(s):

Gas Phase ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Atmospheric Pressure Plasma ◽

Chemical Vapor ◽

Plasma Chemical ◽

Near Surface ◽

Plasma Chemical Vapor Deposition ◽

Phase Chemical

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