A Latch-up Immunized Lateral Trench Insulated Gate Bipolar Transistor with a p+ Diverter Structure for Smart Power Integrated Circuit

2001 ◽  
Vol 40 (Part 1, No. 9A) ◽  
pp. 5267-5270
Author(s):  
Ey Goo Kang ◽  
Seung Hyun Moon ◽  
Man Young Sung
Keyword(s):  
Integrated Circuit ◽  
Bipolar Transistor ◽  
Smart Power ◽  
Insulated Gate Bipolar Transistor ◽  
Power Integrated Circuit ◽  
Latch Up

scholarly journals E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 617
Author(s):  
Li-Fang Jia ◽  
Lian Zhang ◽  
Jin-Ping Xiao ◽  
Zhe Cheng ◽  
De-Feng Lin ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Room Temperature ◽  
Supply Voltage ◽  
High Input ◽  
Smart Power ◽  
Input Noise ◽  
Power Integrated Circuit ◽  
Different Temperatures ◽  
Device Technology ◽  
Si Wafer

AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode GaN inverters has been conducted with detail. The key electrical characters have been analyzed from room temperature (RT) to 200 °C. Small variations of the inverters are observed at different temperatures. The logic swing voltage of 2.91 V and 2.89 V are observed at RT and 200 °C at a supply voltage of 3 V. Correspondingly, low/high input noise margins of 0.78 V/1.67 V and 0.68 V/1.72 V are observed at RT and 200 °C. The inverters also demonstrate small rising edge time of the output signal. The results show great potential for GaN smart power integrated circuit (IC) application.

scholarly journals Electrothermal Averaged Model of a Diode-Transistor Switch Including IGBT and a Rapid Switching Diode

Energies ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 3033 ◽  
Author(s):  
Paweł Górecki ◽  
Krzysztof Górecki
Keyword(s):  
Steady State ◽  
Integrated Circuit ◽  
Good Accuracy ◽  
Bipolar Transistor ◽  
Transistor Switch ◽  
Insulated Gate Bipolar Transistor ◽  
Self Heating ◽  
Proposed Model ◽  
Rapid Switching ◽  
Averaged Model

This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode. The presented model has the form of subcircuits dedicated for simulation program with integrated circuit emphasis (SPICE) and it makes it possible to compute characteristics of DC–DC converters at the steady state considering self-heating phenomena, both in the diode and in IGBT. This kind of model allows computations of voltages, currents and internal temperatures of all used semiconductor devices at the steady state. The formulas used in this model are adequate for both: continuous conducting mode (CCM) and discontinuous conducting mode (DCM). Correctness of the proposed model is verified experimentally for a boost converter including IGBT. Good accuracy in modeling these converter characteristics is obtained.

PUSHING STANDARD CMOS TECHNOLOGIES INTO SMART POWER CONVERSION AND AMPLIFICATION

1995 ◽  
Vol 05 (03) ◽  
pp. 455-463 ◽  
Author(s):  
S. FINCO ◽  
F. H. BEHRENS ◽  
J. GUILHERME ◽  
M. I. CASTRO SIMAS ◽  
M. LANÇA
Keyword(s):  
Integrated Circuit ◽  
High Performance ◽  
Low Cost ◽  
Smart Power ◽  
Medium Voltage ◽  
Wide Range ◽  
Power Integrated Circuit ◽  
Lateral Structures ◽  
Lightly Doped Drain ◽  
Specific Control

A smart power integrated circuit to be fabricated with standard CMOS technologies was developed in view to obtain a versatile, high performance and low cost basic building block, suitable for a wide range of low power applications. This circuit merges together two transistors, connected in a low-side/high-side switch configuration, with specific control and protection circuitries. These transistors are NMOS medium-voltage lateral structures, which use the lightly doped drain concept and are targeted to handle currents up to 2 A and to support 25 V at OFF state. Experimental results on different applications and topologies show the applicability of the smart switching cell on portable systems power supplies and amplifiers (up to 20 W). Its performance also proves the ability of standard CMOS technologies to implement smart power circuits.

200 V Superjunction N-Type Lateral Insulated-Gate Bipolar Transistor With Improved Latch-Up Characteristics

2013 ◽  
Vol 60 (4) ◽  
pp. 1412-1415 ◽  
Author(s):  
Elizabeth Kho Ching Tee ◽  
Marina Antoniou ◽  
Florin Udrea ◽  
Alexander Holke ◽  
Steven John Pilkington ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Insulated Gate Bipolar Transistor ◽  
Latch Up

scholarly journals A Simplified Spice Model for IGBT

1998 ◽  
Vol 21 (4) ◽  
pp. 279-292 ◽  
Author(s):  
A. Haddi ◽  
A. Maouad ◽  
O. Elmazria ◽  
A. Hoffmann ◽  
J. P. Charles
Keyword(s):  
Equivalent Circuit ◽  
Bipolar Transistor ◽  
Experimental Results ◽  
Insulated Gate Bipolar Transistor ◽  
Spice Model ◽  
Safe Operating ◽  
Good Agreement ◽  
Latch Up

A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific phenomena limiting its SOA (Safe Operating Area), such as forward and reverse biased SOA, as well as latch-up. The validity of this model is confirmed by comparison between simulation and experimental results as well as the data sheets. This comparison is tested for two IGBT devices showing two different powers and switching speeds, and a good agreement is recorded for both IGBT devices.

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