Origin of the Hole Current in n-type High-k/Metal Gate Stacks Field Effect Transistor in an Inversion State

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.l1058 ◽

2007 ◽

Vol 46 (No. 44) ◽

pp. L1058-L1060 ◽

Author(s):

Motoyuki Sato ◽

Kikuo Yamabe ◽

Takayuki Aoyama ◽

Yasuo Nara ◽

Yuzuru Ohji

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Stacks ◽

High K ◽

Effect Transistor ◽

Hole Current ◽

Inversion State

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Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

Applied Physics Letters ◽

10.1063/1.2890056 ◽

2008 ◽

Vol 92 (9) ◽

pp. 092901 ◽

Author(s):

P. D. Kirsch ◽

P. Sivasubramani ◽

J. Huang ◽

C. D. Young ◽

M. A. Quevedo-Lopez ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Dipole Model ◽

High K ◽

Effect Transistor ◽

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Technology computer-aided design simulation study for a strained InGaAs channel n-type metal-oxide-semiconductor field-effect transistor with a high-k dielectric oxide layer and a metal gate electrode

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3578466 ◽

2011 ◽

Vol 29 (3) ◽

pp. 032203 ◽

Author(s):

Shu-Tong Chang ◽

Chang-Chun Lee ◽

P.-H. Sun

Keyword(s):

Computer Aided Design ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Effect Transistor ◽

High K Dielectric ◽

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Observations in trapping characteristics of positive bias temperature instability on high-k/metal gate n-type metal oxide semiconductor field effect transistor with the complementary multi-pulse technique

Thin Solid Films ◽

10.1016/j.tsf.2007.12.140 ◽

2008 ◽

Vol 516 (12) ◽

pp. 4222-4225 ◽

Author(s):

J.C. Liao ◽

Y.K. Fang ◽

Y.T. Hou ◽

W.H. Wu ◽

C.L. Hung ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Pulse Technique ◽

Bias Temperature Instability ◽

High K ◽

Effect Transistor

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A tunneling field-effect transistor using side metal gate/high-k material for low power application

2011 International Semiconductor Device Research Symposium (ISDRS) ◽

10.1109/isdrs.2011.6135286 ◽

2011 ◽

Author(s):

Hyun Woo Kim ◽

Jung Han Lee ◽

Wandong Kim ◽

Min-Chul Sun ◽

Jang Hyun Kim ◽

...

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistor ◽

High K ◽

Effect Transistor ◽

Power Application

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Inversion mode n-channel GaAs field effect transistor with high-k/metal gate

Applied Physics Letters ◽

10.1063/1.2912027 ◽

2008 ◽

Vol 92 (15) ◽

pp. 153508 ◽

Author(s):

J. P. de Souza ◽

E. Kiewra ◽

Y. Sun ◽

A. Callegari ◽

D. K. Sadana ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Inversion Mode ◽

High K ◽

Effect Transistor

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Memory and negative-resistance effects in a strained metal-gate high-k n-type field-effect-transistor from 375 K down to 77 K

Semiconductor Science and Technology ◽

10.1088/0268-1242/31/12/124003 ◽

2016 ◽

Vol 31 (12) ◽

pp. 124003

Author(s):

E A Gutiérrez-D ◽

V H Vega-G ◽

P J García-R ◽

O V Huerta-G

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Negative Resistance ◽

High K ◽

Effect Transistor

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Dipole Model Explaining High-k/Metal Gate Field Effect Transistor Threshold Voltage Tuning

ECS Meeting Abstracts ◽

10.1149/ma2009-01/15/725 ◽

2009 ◽

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Dipole Model ◽

High K ◽

Effect Transistor ◽

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Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4974250 ◽

2017 ◽

Vol 35 (1) ◽

pp. 012202

Author(s):

Shahab Siddiqui ◽

Min Dai ◽

Rainer Loesing ◽

Erdem Kaltalioglu ◽

Rajan Pandey ◽

...

Keyword(s):

High Voltage ◽

Field Effect ◽

Oxygen Plasma ◽

Field Effect Transistor ◽

Atomic Layer ◽

Input And Output ◽

High K ◽

Effect Transistor

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Investigation of Positive Bias Temperature Instability Characteristics of Fully Depleted Silicon on Insulator Tunneling Field Effect Transistor with High-k Dielectric Gate Stacks

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2019.16992 ◽

2019 ◽

Vol 19 (10) ◽

pp. 6131-6134

Author(s):

Hyeong-Sub Song ◽

So-Yeong Kim ◽

Dong-Hwan Lim ◽

Sung-Kyu Kwon ◽

Chang-Hwan Choi ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Silicon On Insulator ◽

Positive Bias ◽

Gate Stacks ◽

Fully Depleted ◽

Bias Temperature Instability ◽

High K ◽

Effect Transistor ◽

High K Dielectric

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Hot Carrier ◽

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