Observations in trapping characteristics of positive bias temperature instability on high-k/metal gate n-type metal oxide semiconductor field effect transistor with the complementary multi-pulse technique

Oxide Semiconductor ◽

Positive Bias ◽

Metal Gate ◽

Pulse Technique ◽

Bias Temperature Instability ◽

High K ◽

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Technology computer-aided design simulation study for a strained InGaAs channel n-type metal-oxide-semiconductor field-effect transistor with a high-k dielectric oxide layer and a metal gate electrode

10.1116/1.3578466 ◽

2011 ◽

Vol 29 (3) ◽

pp. 032203 ◽

Cited By ~ 1

Author(s):

Shu-Tong Chang ◽

Chang-Chun Lee ◽

P.-H. Sun

Keyword(s):

Computer Aided Design ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Metal Gate ◽

High K ◽

Effect Transistor ◽

High K Dielectric ◽

Aided Design

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor

10.1116/1.3521479 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01AA05 ◽

Cited By ~ 1

Author(s):

G. Roll ◽

S. Jakschik ◽

M. Goldbach ◽

A. Wachowiak ◽

T. Mikolajick ◽

...

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Interface Defects ◽

High K ◽

Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04da16 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DA16 ◽

Cited By ~ 7

Author(s):

Tetsuro Hayashida ◽

Kazuhiko Endo ◽

Yongxun Liu ◽

Takahiro Kamei ◽

Takashi Matsukawa ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Metal Gate ◽

Tin Film ◽

Layer Deposition ◽

Effect Transistor ◽

Thermal Stability Of

Negative Bias Temperature Instability of p-Channel Metal Oxide Semiconductor Field Effect Transistor with Novel HfxMoyNzMetal Gate Electrodes

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c013 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C013 ◽

Cited By ~ 2

Author(s):

Hsing-Kan Peng ◽

Chao-Sung Lai ◽

Kung-Ming Fan ◽

Shian-Jyh Lin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Gate Electrodes ◽

Bias Temperature Instability ◽

35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l629 ◽

1999 ◽

Vol 38 (Part 2, No. 6A/B) ◽

pp. L629-L631 ◽

Cited By ~ 16

Author(s):

Wataru Saitoh ◽

Shigeharu Yamagami ◽

Atsushi Itoh ◽

Masahiro Asada

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Effect Transistor ◽

P Type

Effects of varying interfacial oxide and high-k layer thicknesses for HfO2 metal–oxide–semiconductor field effect transistor

Applied Physics Letters ◽

10.1063/1.1773370 ◽

2004 ◽

Vol 85 (7) ◽

pp. 1286-1288 ◽

Cited By ~ 21

Author(s):

Se Jong Rhee ◽

Chang Yong Kang ◽

Chang Seok Kang ◽

Rino Choi ◽

Chang Hwan Choi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

High K ◽

Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate

IEEE Electron Device Letters ◽

10.1109/led.2008.2001766 ◽

2008 ◽

Vol 29 (9) ◽

pp. 977-980 ◽

Cited By ~ 30

Author(s):

J. Q. Lin ◽

S. J. Lee ◽

H. J. Oh ◽

G. Q. Lo ◽

D. L. Kwong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Metal Gate ◽

Inversion Mode ◽

New insights in the passivation of high-k/InP through interface characterization and metal–oxide–semiconductor field effect transistor demonstration: Impact of crystal orientation

Journal of Applied Physics ◽

10.1063/1.4772944 ◽

2013 ◽

Vol 113 (1) ◽

pp. 013711 ◽

Cited By ~ 13

Author(s):

Min Xu ◽

Jiangjiang J. Gu ◽

Chen Wang ◽

D. M. Zhernokletov ◽

R. M. Wallace ◽

...

Keyword(s):

Metal Oxide ◽

Crystal Orientation ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Interface Characterization ◽

High K ◽

Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer

Applied Physics Letters ◽

10.1063/1.3330929 ◽

2010 ◽

Vol 96 (8) ◽

pp. 082905 ◽

Cited By ~ 12

Author(s):

W. J. Maeng ◽

Woo-Hee Kim ◽

Ja Hoon Koo ◽

S. J. Lim ◽

Chang-Soo Lee ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Voltage Control ◽

Oxide Semiconductor ◽

Tio2 Layer ◽

Metal Gate ◽

Effect Transistor ◽

Flatband Voltage

Threshold voltage shift and drain current degradation by negative bias temperature instability in Si (110) p-channel metal-oxide-semiconductor field-effect transistor

Applied Physics Letters ◽

10.1063/1.4722796 ◽

2012 ◽

Vol 100 (21) ◽

pp. 212109 ◽

Cited By ~ 2

Author(s):

K. Ota ◽

M. Saitoh ◽

Y. Nakabayashi ◽

T. Ishihara ◽

K. Uchida ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Threshold Voltage Shift ◽

Bias Temperature Instability ◽