Photochemical Surface Modification of Silicone Rubber into Photoluminescent Material by 193 nm ArF Excimer Laser Irradiation

2009 ◽  
Vol 48 (10) ◽  
pp. 102301 ◽  
Author(s):  
Masayuki Okoshi ◽  
Minako Iyono ◽  
Narumi Inoue
Keyword(s):  
Surface Modification ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Silicone Rubber ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
193 Nm

Surface modification of inorganic solid oxides by excimer laser irradiation

1989 ◽  
Author(s):  
Kaoru Igarashi ◽  
Hideaki Saito ◽  
Tomoo Fujioka ◽  
Satoru Fujitsu ◽  
Kunihito Koumoto ◽  
...  
Keyword(s):  
Surface Modification ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Solid Oxides ◽  
Excimer Laser Irradiation

Surface Alteration of Amorphous Si3N4 Films by ArF Excimer Laser Irradiation

1995 ◽  
Vol 34 (Part 2, No. 11A) ◽  
pp. L1482-L1485 ◽  
Author(s):  
Kazuo Nakamae ◽  
Kou Kurosawa ◽  
Yasuo Takigawa ◽  
Wataru Sasaki ◽  
Yasukazu Izawa ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Surface Alteration ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Amorphous Si3n4

scholarly journals Fabrication of Superhydrophobic Silicone Rubber with Periodic Micro/Nano-Suction Cup Structure by ArF Excimer Laser-Induced Photodissociation

Nanomaterials ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 870 ◽  
Author(s):  
Masayuki Okoshi
Keyword(s):  
Excimer Laser ◽  
Silicone Rubber ◽  
Focal Point ◽  
Pulse Number ◽  
Entire Surface ◽  
Suction Cup ◽  
Atomic Force ◽  
Superhydrophobic Property ◽  
Arf Excimer Laser ◽  
193 Nm

A 193-nm ArF excimer laser was used to induce the photodissociation of Si–O bonds of silicone rubber in order to fabricate a periodic micro/nano-suction cup silicone structure, approximately 1 μm in diameter and 2 μm in height at regular intervals of 2.5 μm. The laser was focused on Al-coated silicone rubber by each silica glass microsphere 2.5 μm in diameter, which covered the entire surface of the silicone rubber. The silicone rubber underneath each microsphere photochemically swelled after laser-ablating the coated Al to limit the diameter of the swelling. Simultaneously, the coated Al was able to adjust the focal point to the surface of the silicone rubber to form a hole approximately 500 nm in diameter, centered at the swollen silicone. The dependences of the thickness of the coated-Al and the laser pulse number are discussed, based on the observations of a scanning electron microscope (SEM) and an atomic force microscope (AFM). The superhydrophobic property of the fabricated micro/nano-suction cup structure was successfully found.

Improved Abruptness of Si/Sin Interface by ArF Excimer-Laser Pre-Annealing to Sin

1994 ◽  
Vol 345 ◽  
Author(s):  
Yasutaka Uchida ◽  
Masakiyo Matsumura
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Resolution Limit ◽  
Laser Recrystallization ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Krf Excimer Laser ◽  
Film Annealing

AbstractXPS measurement showed that undesirable SiNH component was reduced drastically from the low-temperature deposited SiN surface by intense ArF excimer-laser irradiation. Although the improved layer was as thin as 15nm, it was very effective to stop diffusion of N atoms from the bottom SiN layer to the top Si layer during the excimer-laser recrystallization step. N-diffused Si layer at the Si/SiN interface was less than the XPS resolution limit for the pre-annealed SiN structure, but about 5nm thick. As a result, the field-effect mobility of the poly-Si/SiN TFT was increased drastically by laser-irradiation to SiN film. Annealing characteristics are also presented for the various SiN film thicknesses and for both the ArF and KrF excimer-laser lights.

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