Threshold Voltage Dependence of Threshold Voltage Variability in Intrinsic Channel Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with Ultrathin Buried Oxide

Chiho Lee; Arifin Tamsir Putra; Ken Shimizu; Toshiro Hiramoto

doi:10.1143/jjap.49.04dc01

Threshold Voltage Dependence of Threshold Voltage Variability in Intrinsic Channel Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with Ultrathin Buried Oxide

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc01 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC01 ◽

Cited By ~ 7

Author(s):

Chiho Lee ◽

Arifin Tamsir Putra ◽

Ken Shimizu ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Voltage Dependence ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Buried Oxide

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An Efficient Quantum-Based Model for the Threshold Voltage of Thin Film Double Gate/Silicon on Insulator Silicon Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.024304 ◽

2010 ◽

Vol 49 (2) ◽

pp. 024304 ◽

Cited By ~ 1

Author(s):

Saeed Mohammadi ◽

Ali Afzali-Kusha

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate

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Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c041 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C041

Author(s):

Sheng-Chun Wang ◽

Pin Su ◽

Kun-Ming Chen ◽

Sheng-Yi Huang ◽

Cheng-Chou Hung ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Dynamic Threshold ◽

Small Signal

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Abnormal Threshold Voltage Dependence on Gate Length in Ultrathin-Film n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors (nMOSFET's) Using Separation by Implanted Oxygen (SIMOX) Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.l304 ◽

1996 ◽

Vol 35 (Part 2, No. 3A) ◽

pp. L304-L307 ◽

Cited By ~ 5

Author(s):

Yasuhisa Omura ◽

Masao Nagase

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Voltage Dependence ◽

Field Effect Transistors ◽

Ultrathin Film ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1378329 ◽

2001 ◽

Vol 90 (2) ◽

pp. 866-870 ◽

Cited By ~ 6

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Consistent ◽

Doped Silicon

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Comparisons of Radio-Frequency Performance of Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.7635 ◽

2007 ◽

Vol 46 (12) ◽

pp. 7635-7638 ◽

Cited By ~ 2

Author(s):

Yasushi Hiraoka ◽

Satoshi Matsumoto

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Effects of buried oxide on electrical performance of thin-film silicon-on-insulator metal–oxide–semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.369763 ◽

1999 ◽

Vol 85 (7) ◽

pp. 3912-3915 ◽

Cited By ~ 7

Author(s):

Jong-Wook Lee ◽

Min-Rok Oh ◽

Yo-Hwan Koh

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Electrical Performance ◽

Buried Oxide ◽

Effect Transistor

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Self-Aligned Asymmetric Metal–Oxide–Semiconductor Field Effect Transistors Fabricated on Silicon-on-Insulator

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.091201 ◽

2009 ◽

Vol 48 (9) ◽

pp. 091201

Author(s):

Jong Pil Kim ◽

Jae Young Song ◽

Sang Wan Kim ◽

Jae Hyun Park ◽

Woo Young Choi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.1.77 ◽

2014 ◽

pp. 77-101

Author(s):

S. Ghosh

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted

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Investigation of Mobility Enhancement Effect in Process-Induced Strained Ultrathin Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2124 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2124-2126 ◽

Cited By ~ 1

Author(s):

Akiko Ohata ◽

Claire Gallon ◽

Claire Fenouillet-Beranger ◽

Sorin Cristoloveanu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Enhancement Effect

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