Reconstruction of Latent Images from Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Resist for Extreme Ultraviolet Lithography

Takahiro Kozawa; Hiroaki Oizumi; Toshiro Itani; Seiichi Tagawa

doi:10.1143/jjap.49.066504

Reconstruction of Latent Images from Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Resist for Extreme Ultraviolet Lithography

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.066504 ◽

2010 ◽

Vol 49 (6) ◽

pp. 066504 ◽

Cited By ~ 44

Author(s):

Takahiro Kozawa ◽

Hiroaki Oizumi ◽

Toshiro Itani ◽

Seiichi Tagawa

Keyword(s):

Line Width ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Ultraviolet Lithography ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resist

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Effect of molecular weight and protection ratio on line edge roughness and stochastic defect generation in chemically amplified resist processes of extreme ultraviolet lithography

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.084002 ◽

2014 ◽

Vol 53 (8) ◽

pp. 084002 ◽

Cited By ~ 2

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Molecular Weight ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resist ◽

On Line ◽

Protection Ratio

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Effects of deprotonation efficiency of protected units on line edge roughness and stochastic defect generation in chemically amplified resist processes for 11 nm node of extreme ultraviolet lithography

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.116504 ◽

2014 ◽

Vol 53 (11) ◽

pp. 116504 ◽

Cited By ~ 1

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Defect Generation ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resist ◽

On Line

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Theoretical study on stochastic defect generation in chemically amplified resist process for extreme ultraviolet lithography

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.066504 ◽

2014 ◽

Vol 53 (6) ◽

pp. 066504 ◽

Cited By ~ 2

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Theoretical Study ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Ultraviolet Lithography ◽

Defect Generation ◽

Chemically Amplified ◽

Chemically Amplified Resist

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Dependence of stochastic defect generation on quantum efficiency of acid generation and effective reaction radius for deprotection in chemically amplified resist process using extreme ultraviolet lithography

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.076502 ◽

2014 ◽

Vol 53 (7) ◽

pp. 076502 ◽

Cited By ~ 1

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Quantum Efficiency ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Ultraviolet Lithography ◽

Defect Generation ◽

Acid Generation ◽

Chemically Amplified ◽

Chemically Amplified Resist ◽

Effective Reaction

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Relationship between Stochastic Effect and Line Edge Roughness in Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Monte Carlo Simulation

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.086504 ◽

2012 ◽

Vol 51 (8R) ◽

pp. 086504 ◽

Cited By ~ 25

Author(s):

Takahiro Kozawa

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Stochastic Effect ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resists

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Relationship between Stochastic Effect and Line Edge Roughness in Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Monte Carlo Simulation

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.086504 ◽

2012 ◽

Vol 51 ◽

pp. 086504 ◽

Cited By ~ 10

Author(s):

Takahiro Kozawa

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Stochastic Effect ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resists

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Relationships between Stochastic Phenomena and Optical Contrast in Chemically Amplified Resist Process of Extreme Ultraviolet Lithography

Journal of Photopolymer Science and Technology ◽

10.2494/photopolymer.27.11 ◽

2014 ◽

Vol 27 (1) ◽

pp. 11-19 ◽

Cited By ~ 1

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Optical Contrast ◽

Ultraviolet Lithography ◽

Chemically Amplified ◽

Chemically Amplified Resist ◽

Stochastic Phenomena

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Relationship between Sensitization Distance and Photon Shot Noise in Line Edge Roughness Formation of Chemically Amplified Resists Used for Extreme Ultraviolet Lithography

Journal of Photopolymer Science and Technology ◽

10.2494/photopolymer.30.197 ◽

2017 ◽

Vol 30 (2) ◽

pp. 197-203 ◽

Cited By ~ 3

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Shot Noise ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resists

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Relationships between quencher diffusion constant and exposure dose dependences of line width, line edge roughness, and stochastic defect generation in extreme ultraviolet lithography

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.016502 ◽

2014 ◽

Vol 54 (1) ◽

pp. 016502 ◽

Cited By ~ 2

Author(s):

Takahiro Kozawa

Keyword(s):

Line Width ◽

Extreme Ultraviolet ◽

Diffusion Constant ◽

Exposure Dose ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Defect Generation ◽

Edge Roughness

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Feasibility study of sub-10-nm-half-pitch fabrication by chemically amplified resist processes of extreme ultraviolet lithography: II. Stochastic effects

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.036507 ◽

2015 ◽

Vol 54 (3) ◽

pp. 036507 ◽

Cited By ~ 4

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Feasibility Study ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Stochastic Effects ◽

Ultraviolet Lithography ◽

Chemically Amplified ◽

Chemically Amplified Resist

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