Dependence of stochastic defect generation on quantum efficiency of acid generation and effective reaction radius for deprotection in chemically amplified resist process using extreme ultraviolet lithography

Takahiro Kozawa; Julius Joseph Santillan; Toshiro Itani

doi:10.7567/jjap.53.076502

Dependence of stochastic defect generation on quantum efficiency of acid generation and effective reaction radius for deprotection in chemically amplified resist process using extreme ultraviolet lithography

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.076502 ◽

2014 ◽

Vol 53 (7) ◽

pp. 076502 ◽

Cited By ~ 1

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Quantum Efficiency ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Ultraviolet Lithography ◽

Defect Generation ◽

Acid Generation ◽

Chemically Amplified ◽

Chemically Amplified Resist ◽

Effective Reaction

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Theoretical study on stochastic defect generation in chemically amplified resist process for extreme ultraviolet lithography

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.066504 ◽

2014 ◽

Vol 53 (6) ◽

pp. 066504 ◽

Cited By ~ 2

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Theoretical Study ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Ultraviolet Lithography ◽

Defect Generation ◽

Chemically Amplified ◽

Chemically Amplified Resist

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Dependence of Absorption Coefficient and Acid Generation Efficiency on Acid Generator Concentration in Chemically Amplified Resist for Extreme Ultraviolet Lithography

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.l979 ◽

2007 ◽

Vol 46 (No. 40) ◽

pp. L979-L981 ◽

Cited By ~ 92

Author(s):

Ryo Hirose ◽

Takahiro Kozawa ◽

Seiichi Tagawa ◽

Toshiyuki Kai ◽

Tsutomu Shimokawa

Keyword(s):

Absorption Coefficient ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Generation Efficiency ◽

Ultraviolet Lithography ◽

Acid Generation ◽

Chemically Amplified ◽

Chemically Amplified Resist

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Effects of deprotonation efficiency of protected units on line edge roughness and stochastic defect generation in chemically amplified resist processes for 11 nm node of extreme ultraviolet lithography

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.116504 ◽

2014 ◽

Vol 53 (11) ◽

pp. 116504 ◽

Cited By ~ 1

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Defect Generation ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resist ◽

On Line

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Modeling and simulation of acid generation in anion-bound chemically amplified resists used for extreme ultraviolet lithography

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.036506 ◽

2015 ◽

Vol 54 (3) ◽

pp. 036506 ◽

Cited By ~ 5

Author(s):

Yoshitaka Komuro ◽

Daisuke Kawana ◽

Taku Hirayama ◽

Katsumi Ohomori ◽

Takahiro Kozawa

Keyword(s):

Modeling And Simulation ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Ultraviolet Lithography ◽

Acid Generation ◽

Chemically Amplified ◽

Chemically Amplified Resists

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Acid generation mechanism in anion-bound chemically amplified resists used for extreme ultraviolet lithography

10.1117/12.2085749 ◽

2015 ◽

Author(s):

Yoshitaka Komuro ◽

Hiroki Yamamoto ◽

Kazuo Kobayashi ◽

Katsumi Ohomori ◽

Takahiro Kozawa

Keyword(s):

Extreme Ultraviolet ◽

Generation Mechanism ◽

Extreme Ultraviolet Lithography ◽

Ultraviolet Lithography ◽

Acid Generation ◽

Chemically Amplified ◽

Chemically Amplified Resists

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Effect of molecular weight and protection ratio on line edge roughness and stochastic defect generation in chemically amplified resist processes of extreme ultraviolet lithography

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.084002 ◽

2014 ◽

Vol 53 (8) ◽

pp. 084002 ◽

Cited By ~ 2

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Molecular Weight ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Line Edge Roughness ◽

Ultraviolet Lithography ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resist ◽

On Line ◽

Protection Ratio

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Relationships between Stochastic Phenomena and Optical Contrast in Chemically Amplified Resist Process of Extreme Ultraviolet Lithography

Journal of Photopolymer Science and Technology ◽

10.2494/photopolymer.27.11 ◽

2014 ◽

Vol 27 (1) ◽

pp. 11-19 ◽

Cited By ~ 1

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Optical Contrast ◽

Ultraviolet Lithography ◽

Chemically Amplified ◽

Chemically Amplified Resist ◽

Stochastic Phenomena

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Feasibility study of sub-10-nm-half-pitch fabrication by chemically amplified resist processes of extreme ultraviolet lithography: II. Stochastic effects

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.036507 ◽

2015 ◽

Vol 54 (3) ◽

pp. 036507 ◽

Cited By ~ 4

Author(s):

Takahiro Kozawa ◽

Julius Joseph Santillan ◽

Toshiro Itani

Keyword(s):

Feasibility Study ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Stochastic Effects ◽

Ultraviolet Lithography ◽

Chemically Amplified ◽

Chemically Amplified Resist

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Feasibility Study on High-Sensitivity Chemically Amplified Resist by Polymer Absorption Enhancement in Extreme Ultraviolet Lithography

Applied Physics Express ◽

10.1143/apex.1.067012 ◽

2008 ◽

Vol 1 ◽

pp. 067012 ◽

Cited By ~ 27

Author(s):

Takahiro Kozawa ◽

Kazumasa Okamoto ◽

Jun Nakamura ◽

Seiichi Tagawa

Keyword(s):

Feasibility Study ◽

Extreme Ultraviolet ◽

High Sensitivity ◽

Absorption Enhancement ◽

Extreme Ultraviolet Lithography ◽

Ultraviolet Lithography ◽

Chemically Amplified ◽

Chemically Amplified Resist

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Reconstruction of Latent Images from Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Resist for Extreme Ultraviolet Lithography

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.066504 ◽

2010 ◽

Vol 49 (6) ◽

pp. 066504 ◽

Cited By ~ 44

Author(s):

Takahiro Kozawa ◽

Hiroaki Oizumi ◽

Toshiro Itani ◽

Seiichi Tagawa

Keyword(s):

Line Width ◽

Extreme Ultraviolet ◽

Extreme Ultraviolet Lithography ◽

Ultraviolet Lithography ◽

Chemically Amplified ◽

Edge Roughness ◽

Chemically Amplified Resist

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