Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.061503 ◽

2011 ◽

Vol 50 (6) ◽

pp. 061503 ◽

Author(s):

Ryosuke Iijima ◽

Lisa F. Edge ◽

John Bruley ◽

Vamsi Paruchuri ◽

Mariko Takayanagi

Keyword(s):

Metal Oxide ◽

Crystal Orientation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Substrates ◽

High K ◽

Orientation Difference

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Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.061503 ◽

2011 ◽

Vol 50 (6R) ◽

pp. 061503 ◽

Author(s):

Ryosuke Iijima ◽

Lisa F. Edge ◽

John Bruley ◽

Vamsi Paruchuri ◽

Mariko Takayanagi

Keyword(s):

Metal Oxide ◽

Crystal Orientation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Substrates ◽

High K ◽

Orientation Difference

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Hot Carrier ◽

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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Applied Physics Letters ◽

10.1063/1.2189456 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132107 ◽

Author(s):

A. Ritenour ◽

A. Khakifirooz ◽

D. A. Antoniadis ◽

R. Z. Lei ◽

W. Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

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Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159330 ◽

2009 ◽

Author(s):

Hock-Chun Chin ◽

Xinke Liu ◽

Leng-Seow Tan ◽

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Cmos Compatible ◽

High K Dielectric

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Effect of La2O3Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BC10 ◽

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Hot Carrier ◽

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Further work function and interface quality improvement on Al2O3 capped high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors by incorporation of fluorine

Thin Solid Films ◽

10.1016/j.tsf.2012.02.087 ◽

2012 ◽

Vol 520 (13) ◽

pp. 4482-4485 ◽

Author(s):

Y.W. Chen ◽

C.M. Lai ◽

L.W. Cheng ◽

C.H. Hsu ◽

C.W. Hsu

Keyword(s):

Quality Improvement ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Quality ◽

High K ◽

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Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses

Applied Physics Letters ◽

10.1063/1.4826918 ◽

2013 ◽

Vol 103 (18) ◽

pp. 183502 ◽

Author(s):

Weichun Luo ◽

Hong Yang ◽

Wenwu Wang ◽

Lichuan Zhao ◽

Hao Xu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Physical Understanding ◽

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Effects of gate edge profile on off-state leakage suppresion in metal gate/high-k dielectric n-type metal-oxide-semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.2734381 ◽

2007 ◽

Vol 90 (18) ◽

pp. 183501 ◽

Author(s):

Chang Yong Kang ◽

Rino Choi ◽

S. C. Song ◽

B. H. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Edge Profile ◽

High K Dielectric ◽

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Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3608241 ◽

2011 ◽

Vol 99 (1) ◽

pp. 012106 ◽

Author(s):

Chih-Hao Dai ◽

Ting-Chang Chang ◽

Ann-Kuo Chu ◽

Yuan-Jui Kuo ◽

Szu-Han Ho ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Carrier Effect ◽

High K ◽

Hot Carrier Effect

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Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3560463 ◽

2011 ◽

Vol 98 (9) ◽

pp. 092112 ◽

Author(s):

Chih-Hao Dai ◽

Ting-Chang Chang ◽

Ann-Kuo Chu ◽

Yuan-Jui Kuo ◽

Wen-Hung Lo ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Dynamic Stress ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Instability ◽

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