Origin of Very Low Effective Barrier Height in Magnetic Tunnel Junctions with a Semiconductor GaO$_{x}$ Tunnel Barrier

2011 ◽  
Vol 50 ◽  
pp. 113002 ◽  
Author(s):  
Suguru Watanabe ◽  
Hidekazu Saito ◽  
Yusuke Mineno ◽  
Shinji Yuasa ◽  
Koji Ando
Keyword(s):  
Barrier Height ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Barrier ◽  
Effective Barrier Height ◽  
Effective Barrier

Origin of Very Low Effective Barrier Height in Magnetic Tunnel Junctions with a Semiconductor GaOxTunnel Barrier

2011 ◽  
Vol 50 (11R) ◽  
pp. 113002
Author(s):  
Suguru Watanabe ◽  
Hidekazu Saito ◽  
Yusuke Mineno ◽  
Shinji Yuasa ◽  
Koji Ando
Keyword(s):  
Barrier Height ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Effective Barrier Height ◽  
Effective Barrier

Low effective barrier height of GaOx tunnel barrier in metal/semiconductor hybrid junctions

2009 ◽  
Vol 94 (15) ◽  
pp. 152101 ◽  
Author(s):  
J. C. Le Breton ◽  
H. Saito ◽  
S. Yuasa ◽  
K. Ando
Keyword(s):  
Barrier Height ◽  
Tunnel Barrier ◽  
Effective Barrier Height ◽  
Effective Barrier

High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices

2002 ◽  
Vol 716 ◽  
Author(s):  
K.L. Ng ◽  
N. Zhan ◽  
M.C. Poon ◽  
C.W. Kok ◽  
M. Chan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Nonvolatile Memory ◽  
Dielectric Material ◽  
Tunneling Current ◽  
Interface Layer ◽  
Si Substrate ◽  
Hfo2 Film ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Nonvolatile Memory Devices

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

Quantum mechanical tunnelling: the missing term to achieve sub-kJ mol−1 barrier heights

2021 ◽  
Author(s):  
Sebastian Kozuch ◽  
Tim Schleif ◽  
Amir Karton
Keyword(s):  
Barrier Height ◽  
Quantum Mechanical ◽  
Effective Barrier Height ◽  
Quantum Tunnelling ◽  
Barrier Heights ◽  
Effective Barrier

Quantum tunnelling can lower the effective barrier height, creating a discrepancy between experiment and theory.

Fabrication of fully epitaxial magnetic tunnel junctions with a Co2MnSi thin film and a MgO tunnel barrier

2007 ◽  
Vol 310 (2) ◽  
pp. 2006-2008 ◽  
Author(s):  
H. Kijima ◽  
T. Ishikawa ◽  
T. Marukame ◽  
K.-I. Matsuda ◽  
T. Uemura ◽  
...  
Keyword(s):  
Thin Film ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Barrier
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