Controllable Crystallization in Phase-Change Memory for Low-Power Multilevel Storage

2012 ◽  
Vol 51 ◽  
pp. 064101 ◽  
Author(s):  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Multilevel Storage ◽  
Change Memory

Si2Sb2Te6Phase Change Material for Low-Power Phase Change Memory Application

2009 ◽  
Vol 2 (9) ◽  
pp. 091401 ◽  
Author(s):  
Xilin Zhou ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
Feng Rao ◽  
Bo Liu ◽  
...  
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Change Material ◽  
Change Memory

Random-Access Multilevel Storage in Phase Change Memory by Staircase-Like Pulse Programming

2011 ◽  
Vol 497 ◽  
pp. 111-115
Author(s):  
Ryota Kobayashi ◽  
Tomoyuki Noguchi ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Experimental Results ◽  
Device Resistance ◽  
Multilevel Storage ◽  
Simulation Results ◽  
Change Memory

We have investigated random-access multilevel storage in phase change memory by staircase-like pulse programming. Staircase-like pulse consists of first sub-pulse and second sub-pulse. Our simulation exhibited that any resistance levels are expected to be randomly accessed by controlling the crystallization with different widths of second sub-pulset2. Based on the simulation results, we did experiment on staircase-like pulse programming. Experimental results showed that the device resistance gradually increased with reducing second sub-pulset2to 0 ns. In other words, random access to any resistance levels was demonstrated to be possible simply by changingt2.

Ultra-Multilevel-Storage Phase Change Memory

2014 ◽  
Vol 936 ◽  
pp. 599-602
Author(s):  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Single Layer ◽  
Programming Method ◽  
Promising Method ◽  
Device Structure ◽  
Material Engineering ◽  
Structure Reliability ◽  
Multilevel Storage ◽  
Change Memory

In this study, we investigated ultra-multilevel-storage (UMLS) in lateral phase change memory (PCM) on the basis of device structure, reliability and programming method. We found that the number of resistance levels was limited strictly by the number of PC layers in multilayer multilevel cell (ML-MLC). A number of distinct levels up to 16 were obtained using a simple single-layer multilevel cell (SL-MLC). And material engineering is expected to greatly improve the reliability of MLS. We believe that fast-freely-achievable (FFA)-MLC by stair-like-pulse programming is a very promising method for futures application.

scholarly journals Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode

2017 ◽  
Vol 5 (5) ◽  
pp. 362-366
Author(s):  
Panni Wang ◽  
Yihan Chen ◽  
Suwen Li ◽  
Salahuddin Raju ◽  
Longyan Wang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory

Study on the Cu-doped Ge2Sb2Te5 for low-power phase change memory

2014 ◽  
Vol 125 ◽  
pp. 143-146 ◽  
Author(s):  
Keyuan Ding ◽  
Kun Ren ◽  
Feng Rao ◽  
Zhitang Song ◽  
Liangcai Wu ◽  
...  
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory

Physical aspects of low power synapses based on phase change memory devices

2012 ◽  
Vol 112 (5) ◽  
pp. 054904 ◽  
Author(s):  
Manan Suri ◽  
Olivier Bichler ◽  
Damien Querlioz ◽  
Boubacar Traoré ◽  
Olga Cueto ◽  
...  
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Change Memory

Superlattice-like Ge 8 Sb 92 /Ge thin films for high speed and low power consumption phase change memory application

2014 ◽  
Vol 93 ◽  
pp. 4-7 ◽  
Author(s):  
Yifeng Hu ◽  
Xiaoyi Feng ◽  
Jiwei Zhai ◽  
Ting Wen ◽  
Tianshu Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Low Power Consumption ◽  
Change Memory
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