Channel Length and Time Dependent Interface Trap Generation near the Source Due to Hot-Carrier Injection in Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.074001 ◽

2012 ◽

Vol 51 ◽

pp. 074001

Author(s):

Ming Hu ◽

Toshiaki Tsuchiya

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Interface Trap ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

Download Full-text

Channel Length and Time Dependent Interface Trap Generation near the Source Due to Hot-Carrier Injection in Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.074001 ◽

2012 ◽

Vol 51 (7R) ◽

pp. 074001

Author(s):

Ming Hu ◽

Toshiaki Tsuchiya

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Interface Trap ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

Download Full-text

The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc09 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC09 ◽

Cited By ~ 2

Author(s):

Ming Hu ◽

Takuya Yamane ◽

Toshiaki Tsuchiya

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Generation Process ◽

Interface Traps ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

Download Full-text

The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bc09 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BC09 ◽

Cited By ~ 4

Author(s):

Ming Hu ◽

Takuya Yamane ◽

Toshiaki Tsuchiya

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Generation Process ◽

Interface Traps ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

Download Full-text

On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1389318 ◽

2001 ◽

Vol 79 (6) ◽

pp. 863-865 ◽

Cited By ~ 4

Author(s):

Kangguo Cheng ◽

Jean-Pierre Leburton ◽

Karl Hess ◽

Joseph W. Lyding

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Hot Electron ◽

Carrier Injection

Download Full-text

Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors during Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.409 ◽

2003 ◽

Vol 42 (Part 1, No. 2A) ◽

pp. 409-413 ◽

Cited By ~ 5

Author(s):

Shih-hui Chen ◽

Jeng Gong ◽

Meng-chyi Wu ◽

Tsung-yi Huang ◽

Jei-feng Huang ◽

...

Keyword(s):

Metal Oxide ◽

High Voltage ◽

Field Effect ◽

Series Resistance ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress

Download Full-text

Identification of Fixed and Interface Trap Charges in Hot-Carrier Stressed Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) through Ultraviolet Light Anneal and Gate Capacitance Measurements

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l101 ◽

1995 ◽

Vol 34 (Part 2, No. 1B) ◽

pp. L101-L104 ◽

Cited By ~ 1

Author(s):

C. H. Ling

Keyword(s):

Metal Oxide ◽

Ultraviolet Light ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Hot Carrier ◽

Capacitance Measurements ◽

Gate Capacitance

Download Full-text

Identification of Fixed and Interface Trap Charges in Hot-Carrier Stressed Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) through Ultraviolet Light Anneal and Gate Capacitance Measurements

Japanese Journal of Applied Physics ◽

10.7567/jjap.34.l101 ◽

1995 ◽

Vol 34 (1B) ◽

pp. L101 ◽

Cited By ~ 1

Author(s):

C. H. Ling C. H. Ling

Keyword(s):

Metal Oxide ◽

Ultraviolet Light ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Hot Carrier ◽

Capacitance Measurements ◽

Gate Capacitance

Download Full-text

Quantum interference in ultrashort channel length silicon metal‐oxide‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.106121 ◽

1991 ◽

Vol 59 (16) ◽

pp. 2028-2030 ◽

Cited By ~ 13

Author(s):

A. Hartstein

Keyword(s):

Metal Oxide ◽

Quantum Interference ◽

Field Effect ◽

Field Effect Transistors ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

Download Full-text

Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

Applied Physics Letters ◽

10.1063/1.4870257 ◽

2014 ◽

Vol 104 (13) ◽

pp. 131605 ◽

Cited By ~ 3

Author(s):

Thenappan Chidambaram ◽

Dmitry Veksler ◽

Shailesh Madisetti ◽

Andrew Greene ◽

Michael Yakimov ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Hall Method

Download Full-text