On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal–oxide–semiconductor field-effect transistors

Oxide Semiconductor ◽

Interface Trap ◽

Hot Electron ◽

Carrier Injection

Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

Applied Physics Letters ◽

10.1063/1.4870257 ◽

2014 ◽

Vol 104 (13) ◽

pp. 131605 ◽

Cited By ~ 3

Author(s):

Thenappan Chidambaram ◽

Dmitry Veksler ◽

Shailesh Madisetti ◽

Andrew Greene ◽

Michael Yakimov ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Trap Density ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Hall Method

Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors

10.1143/jjap.47.6200 ◽

2008 ◽

Vol 47 (8) ◽

pp. 6200-6204 ◽

Cited By ~ 1

Author(s):

Chorng-Jye Sheu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Drain Current ◽

Oxide Semiconductor ◽

Hot Electron ◽

Buried Channel ◽

P Type ◽

Post Stress

The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

10.1143/jjap.51.02bc09 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC09 ◽

Cited By ~ 2

Author(s):

Ming Hu ◽

Takuya Yamane ◽

Toshiaki Tsuchiya

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Generation Process ◽

Interface Traps ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

Hot-electron injection in stacked-gate metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1890445 ◽

2005 ◽

Vol 97 (10) ◽

pp. 104501

Author(s):

M. P. Temple ◽

D. W. Dyke ◽

P. A. Childs

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Electron Injection ◽

Oxide Semiconductor ◽

Hot Electron ◽

Hot Electron Injection

Channel Length and Time Dependent Interface Trap Generation near the Source Due to Hot-Carrier Injection in Metal–Oxide–Semiconductor Field-Effect Transistors

10.7567/jjap.51.074001 ◽

2012 ◽

Vol 51 (7R) ◽

pp. 074001

Author(s):

Ming Hu ◽

Toshiaki Tsuchiya

Keyword(s):

Field Effect ◽

Channel Length ◽

Time Dependent ◽

Oxide Semiconductor ◽

Interface Trap ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

Direct observation of channel hot-electron energy in short-channel metal-oxide-semiconductor field-effect transistors

10.1109/icsict.2010.5667466 ◽

2010 ◽

Author(s):

Gang Zhang ◽

Cheng Yang ◽

Hua-Min Li ◽

Tian-zi Shen ◽

Won Jong Yoo

Keyword(s):

Metal Oxide ◽

Electron Energy ◽

Direct Observation ◽

Field Effect ◽

Oxide Semiconductor ◽

Hot Electron ◽

Short Channel

Hydrogen-related defect creation at the Si(100)–SiO2interface of metal-oxide-semiconductor field effect transistors during hot electron stress

Superlattices and Microstructures ◽

10.1006/spmi.2000.0859 ◽

2000 ◽

Vol 27 (5-6) ◽

pp. 441-445 ◽

Cited By ~ 2

Author(s):

B.R. Tuttle ◽

K. Hess ◽

L.F. Register

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Hot Electron ◽

Defect Creation ◽

Related Defect

Bulk and interface trap generation under negative bias temperature instability stress of p-channel metal-oxide-semiconductor field-effect transistors with nitrogen and silicon incorporated HfO2 gate dielectrics

Applied Physics Letters ◽

10.1063/1.3541879 ◽

2011 ◽

Vol 98 (6) ◽

pp. 063504 ◽

Cited By ~ 8

Author(s):

Changhwan Choi ◽

Jack C. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Oxide Semiconductor ◽

Interface Trap ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Bias Temperature Instability

A new third‐level charge pumping method for accurate determination of interface‐trap parameters in metal‐oxide‐semiconductor field‐effect‐transistors

Review of Scientific Instruments ◽

10.1063/1.1144713 ◽

1994 ◽

Vol 65 (6) ◽

pp. 2141-2142 ◽

Cited By ~ 14

Author(s):

Jean‐Luc Autran ◽

Bernard Balland

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Accurate Determination ◽

Oxide Semiconductor ◽

Interface Trap ◽

Charge Pumping

Ambipolar Carrier Injection Characteristics of Erbium-Silicidedn-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors

10.1143/jjap.45.730 ◽

2006 ◽

Vol 45 (2A) ◽

pp. 730-732 ◽

Cited By ~ 8

Author(s):

Moongyu Jang ◽

Yarkyeon Kim ◽

Myungsim Jeon ◽

Cheljong Choi ◽

Byoungchul Park ◽

...

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Oxide Semiconductor ◽

Carrier Injection ◽

Barrier Metal