Anomalous Electrical Resistivity at High Temperatures in Bismuth

1975 ◽  
Vol 38 (5) ◽  
pp. 1544-1544 ◽  
Author(s):  
Shuichi Otake ◽  
Naoshi Matsuno
2009 ◽  
Vol 24 (2) ◽  
pp. 430-435 ◽  
Author(s):  
D. Li ◽  
H.H. Hng ◽  
J. Ma ◽  
X.Y. Qin

The thermoelectric properties of Nb-doped Zn4Sb3 compounds, (Zn1–xNbx)4Sb3 (x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine β-Zn4Sb3. Among the compounds studied, the lightly substituted (Zn0.995Nb0.005)4Sb3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn4Sb3 compound for the temperature range investigated. In particular, the ZT of (Zn0.995Nb0.005)4Sb3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn4Sb3 obtained in this study.


1974 ◽  
pp. 231-238 ◽  
Author(s):  
V. A. Petrov ◽  
V. Ya. Chekhovskoi ◽  
A. E. Sheindlin ◽  
I. I. Kashekhlebova ◽  
V. A. Nikolaeva ◽  
...  

1982 ◽  
Vol 25 (3) ◽  
pp. 208-212 ◽  
Author(s):  
V. A. Antropov ◽  
B. S. Vorontsov ◽  
S. P. Dovgopol ◽  
I. Z. Radovskii ◽  
P. V. Gel'd

1978 ◽  
Vol 21 (12) ◽  
pp. 1572-1576
Author(s):  
B. S. Vorontsov ◽  
S. P. Dovgopol ◽  
P. V. Gel'd

2012 ◽  
Vol 50 (3) ◽  
pp. 348-353 ◽  
Author(s):  
V. E. Sidorov ◽  
S. A. Uporov ◽  
D. A. Yagodin ◽  
K. I. Grushevskii ◽  
N. S. Uporova ◽  
...  

1992 ◽  
Vol 4 (2) ◽  
pp. 115-118,f2
Author(s):  
Tadashi SHIRAISHI ◽  
Kouichi SHIONO ◽  
Rimantas VAITKUS ◽  
Nobuhito MUKAI ◽  
Hiroshi NAKANE ◽  
...  

Author(s):  
K. Gurukrishna ◽  
H. R. Nikhita ◽  
S. M. Mallikarjuna Swamy ◽  
Ashok Rao

AbstractA detailed investigation on the temperature dependent electrical properties of Cu2SnSe3 system, synthesized via conventional solid-state reaction at different sintering temperatures are presented in this communication. All the samples exhibit degenerate semiconducting nature at low temperatures. The existence of small polarons and hence electron–phonon interactions are confirmed at temperatures below 400 K. A transition was observed from degenerate to non-degenerate semiconducting behaviour at high temperatures (T > 400 K). The study confirms the unusual transition in electrical resistivity as well as thermopower at high temperatures in all the compounds, demonstrating the existence of minority carrier excitation along with temperature-triggered ionisation of the defects. The transport behaviour is further supported by an upward movement of Fermi level away from the valence band. Highest weighted mobility of 8.2 cm2 V−1 s−1 at 673 K was obtained for the sample sintered at 1073 K. A considerable decrease in electrical resistivity with increase in temperature (T > 400 K) has driven the power factor to increase exponentially, thereby achieving highest value of 188 µV/mK2 (at 673 K) for the sample sintered at 673 K. Graphic abstract


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