(Invited) Epitaxial Growth of Low Defect SiGe Buffer Layers for Integration of New Materials on 300 mm Silicon Wafers

ABSTRACTKOH, an anisotropic etchant of monocrystalline Si, may cause roughness and defects whose shapes are related to crystallographic orientations. This paper studies the effect of processing steps on the formation of geometric etch defects. Implantation, thermal treatment, epitaxial growth or photoresist were not the source of such defects. In the scope of this study, only unwanted damage caused geometric etch defects. This makes the observation of the wafer after KOH etch a good indicator of the quality of previous steps.

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Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-243-495 ◽

1991 ◽

Vol 243 ◽

Cited By ~ 2

Author(s):

K. Nashimoto ◽

D. K. Fork ◽

F. A. Ponce ◽

T. H. Geballe

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Epitaxial Growth ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Buffer Layers ◽

Laser Deposition ◽

Hrtem Observation ◽

Device Applications ◽

Ferroelectric Hysteresis

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.

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Roles of Buffer Layers in Epitaxial Growth ofSrTiO3Films on Silicon Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.1472 ◽

1994 ◽

Vol 33 (Part 1, No. 3A) ◽

pp. 1472-1477 ◽

Cited By ~ 56

Author(s):

Bum Ki Moon ◽

Hiroshi Ishiwara

Keyword(s):

Epitaxial Growth ◽

Buffer Layers ◽

Silicon Substrates

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Epitaxial Growth of Solution-Based Rare-Earth Niobate, RE3NbO7, Films on Biaxially Textured Ni–W Substrates

Journal of Materials Research ◽

10.1557/jmr.2005.0011 ◽

2005 ◽

Vol 20 (1) ◽

pp. 6-9 ◽

Cited By ~ 10

Author(s):

M. Paranthaman ◽

M.S. Bhuiyan ◽

S. Sathyamurthy ◽

H.Y. Zhai ◽

A. Goyal ◽

...

Keyword(s):

Rare Earth ◽

Critical Current Density ◽

Epitaxial Growth ◽

Chemical Solution Deposition ◽

Ybco Film ◽

Pulsed Laser ◽

Buffer Layers ◽

Laser Deposition ◽

Chemical Solution ◽

Solution Deposition

A new series of rare earth-niobate, RE3NbO7 (RE=Y,Gd,Eu), buffer layers were developed for the growth of superconducting YBa2Cu3O7−δ (YBCO) films on biaxially textured Ni–W (3 at.%) substrates. Using chemical solution deposition, smooth, crack-free, and epitaxial RE3NbO7 (RE = Y,Gd,Eu) films were grown on cube-textured Ni–W substrate. YBCO film with a critical current density of 1.1 × 106 A/cm2 in self-field at 77 K was grown directly on a single Gd3NbO7-buffered Ni–W substrate using pulsed laser deposition.

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