Enhanced Growth Rate in Atomic Layer Epitaxy of Indium Oxide and Indium-Tin Oxide Thin Films

1999 ◽  
Vol 1 (3) ◽  
pp. 156 ◽  
Author(s):  
Mikko Ritala
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Indium Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films

Growth of Indium‐Tin‐Oxide Thin Films by Atomic Layer Epitaxy

1995 ◽  
Vol 142 (10) ◽  
pp. 3538-3541 ◽  
Author(s):  
Timo Asikainen ◽  
Mikko Ritala ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films

Cadmium Sulphide Thin Films Grown By Atomic Layer Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
Aimo Rautiainen ◽  
Yrjö Koskinen ◽  
Jarmo Skarp ◽  
Sven Lindfors
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Inorganic Compounds ◽  
Substrate Surface ◽  
Cadmium Sulphide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Elemental Reactants ◽  
Cds Films

ABSTRACTPolycrystalline cadmium sulphide (CdS) thin films were grown by Atomic Layer Epitaxy (ALE) using indium tin oxide and tin oxide coated glass substrates. Some of the experiments were made using elemental reactants, and others with inorganic compounds as reactants. Films were characterized using various techniques such as XRD, SEM and optical transmission spectroscopy. Growth rate of CdS films was observed to be 1/4 - 1/3 monolayer per cycle with elemental reactants. A full monolayer/cycle coverage was obtained when using CdCl2 and H2S as reactants. The crystalline structure of the CdS films wis β-cubic (111) when using elemental reactants. The mixed structure was observed when inorganic compounds were used as reactants. Only the hexagonal phase was observed, when substrate surface was pretreated before CdS deposition.

scholarly journals Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Precursors

2008 ◽  
Vol 112 (6) ◽  
pp. 1938-1945 ◽  
Author(s):  
Jeffrey W. Elam ◽  
David A. Baker ◽  
Alex B. F. Martinson ◽  
Michael J. Pellin ◽  
Joseph T. Hupp
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition

Enhanced growth rate in atomic layer epitaxy deposition of magnesium oxide thin films

2000 ◽  
Vol 10 (8) ◽  
pp. 1857-1861 ◽  
Author(s):  
Matti Putkonen ◽  
Timo Sajavaara ◽  
Lauri Niinistö
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Magnesium Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films

scholarly journals Densification and Grain Growth of Indium-Tin-Oxide and Indium Oxide Thin Films Fabricated by Dip Coating Process

2009 ◽  
Vol 34 (2) ◽  
pp. 253-256 ◽  
Author(s):  
Yoshiyuki Seki ◽  
Seiji Hiratsuka ◽  
Meihan Wang ◽  
Shigeyuki Seki ◽  
Kouichi Haga ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Indium Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Dip Coating ◽  
Coating Process ◽  
Oxide Thin Films

Plasma-assisted deposition of indium tin oxide thin films by sublimation using an anodic vacuum arc discharge

2021 ◽  
pp. 138731
Author(s):  
Bert Scheffel ◽  
Olaf Zywitzki ◽  
Thomas Preußner ◽  
Torsten Kopte
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Arc Discharge ◽  
Vacuum Arc ◽  
Oxide Thin Films

Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy

1996 ◽  
Vol 6 (1) ◽  
pp. 27-31 ◽  
Author(s):  
Minna Nieminen ◽  
Lauri Niinistö ◽  
Eero Rauhala
Keyword(s):  
Thin Films ◽  
Gallium Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films
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