Remote Plasma-Enhanced Chemical Vapor Deposition of Nanoporous Low-Dielectric Constant SiCOH Films Using Vinyltrimethylsilane

Vapor Deposition ◽

Chemical Vapor ◽

Low Dielectric Constant ◽

Remote Plasma ◽

The structures of low dielectric constant SiOC thin films prepared by direct and remote plasma enhanced chemical vapor deposition

Thin Solid Films ◽

10.1016/j.tsf.2006.10.095 ◽

2007 ◽

Vol 515 (12) ◽

pp. 5035-5039 ◽

Cited By ~ 23

Author(s):

Jaeyeong Heo ◽

Hyeong Joon Kim ◽

JeongHoon Han ◽

Jong-Won Shon

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Dielectric Constant ◽

Remote Plasma ◽

Low Dielectric Constant Fluorinated Oxide Films Prepared by Remote Plasma Chemical Vapor Deposition

10.7567/ssdm.1995.pc-5-4 ◽

1995 ◽

Author(s):

Seung Min LEE ◽

Min PARK ◽

Kyu Chang PARK ◽

Jong Tae BAEK ◽

Jin JANG

Keyword(s):

Dielectric Constant ◽

Vapor Deposition ◽

Oxide Films ◽

Chemical Vapor ◽

Low Dielectric Constant ◽

Remote Plasma ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Low Dielectric Constant Fluorinated Oxide Films Prepared by Remote Plasma Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.1579 ◽

1996 ◽

Vol 35 (Part 1, No. 2B) ◽

pp. 1579-1582 ◽

Cited By ~ 13

Author(s):

Seung Min Lee ◽

Min Park ◽

Kyu Chang Park ◽

Jong Tae Bark ◽

Jin Jang

Keyword(s):

Dielectric Constant ◽

Vapor Deposition ◽

Oxide Films ◽

Chemical Vapor ◽

Low Dielectric Constant ◽

Remote Plasma ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Formation of Si-based organic thin films with low dielectric constant by using remote plasma enhanced chemical vapor deposition from hexamethyldisiloxane

Thin Solid Films ◽

10.1016/s0040-6090(98)01693-9 ◽

1999 ◽

Vol 343-344 ◽

pp. 457-460 ◽

Cited By ~ 20

Author(s):

Toshiaki Fujii ◽

Mineo Hiramatsu ◽

Masahito Nawata

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Thin Films ◽

Low Dielectric Constant ◽

Remote Plasma ◽

Effects of Post-Deposition Heat Treatment on the Properties of Low Dielectric Constant Plasma Polymerized Decahydronaphthalene Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.l1324 ◽

2000 ◽

Vol 39 (Part 2, No. 12B) ◽

pp. L1324-L1326 ◽

Cited By ~ 8

Author(s):

Jaeyoung Yang ◽

Cheonman Shim ◽

Donggeun Jung

Keyword(s):

Thin Films ◽

Heat Treatment ◽

Dielectric Constant ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Dielectric Constant ◽

Low Dielectric ◽

Post Deposition

? Electrical conduction in low dielectric constant SiOC(-H) films with nano-pore structure using dimethyldimethoxysilane /O2 precursors deposited by plasma-enhanced chemical vapor deposition

Journal of the Korean Physical Society ◽

10.3938/jkps.56.1478 ◽

2010 ◽

Vol 56 (5) ◽

pp. 1478-1483 ◽

Cited By ~ 2

Author(s):

Chi Kyu Choi ◽

Jong Kwan Woo ◽

R. Navamathavan ◽

Kwang Man Lee ◽

Chang Young Kim ◽

...

Keyword(s):

Dielectric Constant ◽

Pore Structure ◽

Electrical Conduction ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Dielectric Constant ◽

Characterization of low dielectric constant plasma polymer films deposited by plasma-enhanced chemical vapor deposition using decamethyl-cyclopentasiloxane and cyclohexane as the precursors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2148414 ◽

2006 ◽

Vol 24 (1) ◽

pp. 165-169 ◽

Cited By ~ 11

Author(s):

Jaeyoung Yang ◽

Sungwoo Lee ◽

Hyoungsun Park ◽

Donggeun Jung ◽

Heeyeop Chae

Keyword(s):

Dielectric Constant ◽

Polymer Films ◽

Vapor Deposition ◽

Chemical Vapor ◽

Plasma Polymer ◽

Low Dielectric Constant ◽

Atomic structure and defect densities in low dielectric constant carbon doped hydrogenated silicon oxide films, deposited by plasma-enhanced chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.1507811 ◽

2002 ◽

Vol 92 (8) ◽

pp. 4605-4611 ◽

Cited By ~ 37

Author(s):

V. Ligatchev ◽

T. K. S. Wong ◽

B. Liu ◽

Rusli

Keyword(s):

Dielectric Constant ◽

Vapor Deposition ◽

Silicon Oxide ◽

Chemical Vapor ◽

Low Dielectric Constant ◽

Hydrogenated Silicon ◽

Carbon Doped ◽

Low Dielectric ◽

Defect Densities

Preparation of low dielectric constant F‐doped SiO2 films by plasma enhanced chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.116548 ◽

1996 ◽

Vol 68 (6) ◽

pp. 832-834 ◽

Cited By ~ 29

Author(s):

Sang Woo Lim ◽

Yukihiro Shimogaki ◽

Yoshiaki Nakano ◽

Kunio Tada ◽

Hiroshi Komiyama

Keyword(s):

Dielectric Constant ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Dielectric Constant ◽

Sio2 Films ◽

Chemical vapor deposition of low-dielectric constant organosilicon-based thin films

10.17760/d10019224 ◽

2009 ◽

Author(s):

Nariné Razmik Malkhasyan

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Dielectric Constant ◽