Study on SONOS Nonvolatile Memory Technology Using High-Density Plasma CVD Silicon Nitride

2004 ◽  
Vol 7 (6) ◽  
pp. G113 ◽  
Author(s):  
T. C. Chang ◽  
S. T. Yan ◽  
P. T. Liu ◽  
C. W. Chen ◽  
Y. C. Wu ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Nonvolatile Memory ◽  
High Density ◽  
Plasma Cvd ◽  
Density Plasma

Reliability of silicon nitride gate dielectrics grown at 400 °C formed by microwave-excited high-density plasma

2003 ◽  
Vol 216 (1-4) ◽  
pp. 246-251 ◽  
Author(s):  
Ichiro Ohshima ◽  
Weitao Cheng ◽  
Yasuhiro Ono ◽  
Masaaki Higuchi ◽  
Masaki Hirayama ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Gate Dielectrics ◽  
High Density ◽  
Density Plasma

Characterization of high-density plasma CVD USG film

1997 ◽  
Author(s):  
Wei Lu ◽  
Jia Z. Zheng ◽  
John Sudijuno ◽  
Hoon L. Yap ◽  
Kok S. Fam ◽  
...  
Keyword(s):  
High Density ◽  
Plasma Cvd ◽  
Density Plasma

RF Plasma CVD Using Hollow Cathode Discharge

1988 ◽  
Vol 129 ◽  
Author(s):  
Shin Araki ◽  
Hideki Kamaji ◽  
Kazuo Norimoto
Keyword(s):  
Hollow Cathode ◽  
Low Pressure ◽  
High Density ◽  
Hollow Cathode Discharge ◽  
Rf Plasma ◽  
High Deposition Rate ◽  
Plasma Cvd ◽  
Plasma Damage ◽  
Discharge Electrode ◽  
Density Plasma

ABSTRACTWe have made a-Si photoreceptors at low pressure to prevent the formation of SimHn powders and by separating the growing surface from the high density plasma. A new plasma CVD method using a hollow-cathode discharge, where the discharge electrode is the cathode, is described. There is a hollow region in the discharge electrode. Hollow-cathode discharge enables a high density plasma to form at low pressure. The gas is decomposed in the hollow cathode preventing plasma damage to the film. This method allows us to achieve a high deposition rate (10 µm/h) and good quality films for photoreceptors.

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