Advantage of silicon nitride gate insulator transistor by using microwave excited high-density plasma for applying 100nm technology node
2003 ◽
Vol 216
(1-4)
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pp. 246-251
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2000 ◽
Vol 47
(7)
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pp. 1370-1374
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Keyword(s):
Keyword(s):
Keyword(s):
2002 ◽
Vol 153
(1)
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pp. 67-71
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2004 ◽
Vol 7
(6)
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pp. G113
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1999 ◽
Vol 146
(6)
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pp. 2254-2257
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2010 ◽
Vol 157
(2)
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pp. G33
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