Advantage of silicon nitride gate insulator transistor by using microwave excited high-density plasma for applying 100nm technology node

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S. Sugawa ◽  
I. Ohshima ◽  
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Y. Saito ◽  
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...  
2003 ◽  
Vol 216 (1-4) ◽  
pp. 246-251 ◽  
Author(s):  
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Weitao Cheng ◽  
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Masaki Hirayama ◽  
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2007 ◽  
Vol 47 (4-5) ◽  
pp. 786-789
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Hiroaki Tanaka ◽  
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2004 ◽  
Vol 7 (6) ◽  
pp. G113 ◽  
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T. C. Chang ◽  
S. T. Yan ◽  
P. T. Liu ◽  
C. W. Chen ◽  
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1999 ◽  
Vol 146 (6) ◽  
pp. 2254-2257 ◽  
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