Highly robust ultrathin silicon nitride films grown at low-temperature by microwave-excitation high-density plasma for giga scale integration

2000 ◽  
Vol 47 (7) ◽  
pp. 1370-1374 ◽  
Author(s):  
K. Sekine ◽  
Y. Saito ◽  
M. Hirayama ◽  
T. Ohmi
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
High Density ◽  
Silicon Nitride Films ◽  
Scale Integration ◽  
Microwave Excitation ◽  
Density Plasma

Reliability of silicon nitride gate dielectrics grown at 400 °C formed by microwave-excited high-density plasma

2003 ◽  
Vol 216 (1-4) ◽  
pp. 246-251 ◽  
Author(s):  
Ichiro Ohshima ◽  
Weitao Cheng ◽  
Yasuhiro Ono ◽  
Masaaki Higuchi ◽  
Masaki Hirayama ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Gate Dielectrics ◽  
High Density ◽  
Density Plasma

Low-temperature hydrolysis (oxidation) of plasma-deposited silicon nitride films

1989 ◽  
Vol 1 (2) ◽  
pp. 194-198 ◽  
Author(s):  
J. N. Chiang ◽  
S. G. Ghanayem ◽  
D. W. Hess
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Silicon Nitride Films

Spectrometric analysis of silicon nitride films deposited by low-temperature liquid-source CVD

2019 ◽  
Vol 126 (13) ◽  
pp. 133101 ◽  
Author(s):  
R. Kou ◽  
N. Yamamoto ◽  
G. Fujii ◽  
T. Aihara ◽  
T. Tsuchizawa ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Spectrometric Analysis ◽  
Silicon Nitride Films ◽  
Liquid Source ◽  
Temperature Liquid

Low Temperature Remote Plasma Assisted Jet Vapor Deposition of Silicon Nitride

1997 ◽  
Vol 495 ◽  
Author(s):  
J. Veteran ◽  
C. Hobbs ◽  
R. Hegde ◽  
P. Tobin ◽  
V. Wang ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Microwave Cavity ◽  
Promising Technique ◽  
Thermal Budget ◽  
Silicon Nitride Films ◽  
Jet Vapor Deposition ◽  
Process Gases

ABSTRACTAs MOSFET dimensions are aggressively scaled, minimizing the thermal budget becomes critical for limiting the diffusion of channel profiles. Unfortunately, high quality dielectrics with low deposition temperatures have not been readily available. Typical room temperature dielectrics are porous and electrically leaky. A promising technique for low temperature dielectric deposition is Jet Vapor Deposition (JVD). [1] Two coaxial quartz nozzles spray the process gases to the substrate surface at super-sonic speeds while a microwave cavity generates a plasma in the nozzle. [2] We have successfully deposited silicon nitride films using SiH4/He and N2/He gas mixtures. These are the first reported JVD results on 200 mm wafers.

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