Optically Stimulated Deep‐Level Impedance Spectroscopy: Application to an n‐GaAs Schottky Diode

A flexible Schiff-base compound has been synthesized and structurally confirmed by X-ray crystallography. The compound behaves as a Schottky diode, as supported by the impedance spectroscopy.

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Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.242.163 ◽

2015 ◽

Vol 242 ◽

pp. 163-168 ◽

Cited By ~ 2

Author(s):

Ilia L. Kolevatov ◽

Frank Herklotz ◽

Viktor Bobal ◽

Bengt Gunnar Svensson ◽

Edouard V. Monakhov

Keyword(s):

Schottky Diode ◽

Deep Level Transient Spectroscopy ◽

Minority Carrier ◽

Deep Level ◽

Energy Levels ◽

Depletion Region ◽

Type Silicon ◽

Oxygen Center ◽

Hydrogen Vacancy ◽

Transient Spectroscopy

The evolution of irradiation-induced and hydrogen-related defects in n-type silicon in the temperature range 0 – 300 °C has been studied by deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). Implantation of a box-like profile of hydrogen was performed into the depletion region of a Schottky diode to undertake the DLTS and MCTS measurements. Proportionality between the formation of two hydrogen-related deep states and a decrease of the vacancy-oxygen center concentration was found together with the appearance of new hydrogen-related energy levels.

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Investigation of RuO2/4H–SiC Schottky diode contacts by deep level transient spectroscopy

Chemical Physics Letters ◽

10.1016/j.cplett.2006.08.084 ◽

2006 ◽

Vol 429 (4-6) ◽

pp. 617-621 ◽

Cited By ~ 9

Author(s):

D. Buc ◽

L. Stuchlikova ◽

U. Helmersson ◽

W.H. Chang ◽

I. Bello

Keyword(s):

Schottky Diode ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Transient Spectroscopy

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Deep level transient spectroscopy (DLTS) of a poly(p-phenylene vinylene) Schottky diode

Synthetic Metals ◽

10.1016/s0379-6779(99)00446-4 ◽

2000 ◽

Vol 111-112 ◽

pp. 273-276 ◽

Cited By ~ 37

Author(s):

A.J Campbell ◽

D.D.C Bradley ◽

E Werner ◽

W Brütting

Keyword(s):

Schottky Diode ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Phenylene Vinylene ◽

Transient Spectroscopy

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Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors

Materials Science Forum ◽

10.4028/www.scientific.net/msf.679-680.547 ◽

2011 ◽

Vol 679-680 ◽

pp. 547-550

Author(s):

Rupert C. Stevens ◽

Konstantin Vassilevski ◽

John E. Lees ◽

Nicolas G. Wright ◽

Alton B. Horsfall

Keyword(s):

Schottky Diode ◽

Nuclear Power ◽

Proton Irradiation ◽

Deep Level ◽

High Dose ◽

X Ray ◽

Power Stations ◽

Radiation Induced ◽

Transient Spectroscopy ◽

Induced Defects

Detectors capable of withstanding high radiation environments for prolonged periods of exposure are essential for the monitoring of nuclear power stations and nuclear waste as well as for space exploration. Schottky diode X-ray detectors were exposed to high dose proton irradiation (1013 cm-2, 50 MeV) and changes in the detection resolution (spectroscopic full width half-maximum) have been observed. Using Deep Level Transient Spectroscopy (DLTS) and the degradation of the electrical characteristics of the diode, we have shown that radiation induced traps located in the upper half of the bandgap have reduced the concentration of carriers.

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