A Mathematical Model for the Influence of Deep‐Level Electronic States on Photoelectrochemical Impedance Spectroscopy: I . Theoretical Development

1992 ◽  
Vol 139 (1) ◽  
pp. 118-126 ◽  
Author(s):  
D. Bivings Bonham ◽  
Mark E. Orazem

1996 ◽  
Vol 143 (12) ◽  
pp. 4074-4079 ◽  
Author(s):  
Andrew N. Jansen ◽  
Mark E. Orazem




2005 ◽  
Vol 108-109 ◽  
pp. 109-114
Author(s):  
R. Khalil ◽  
Vitaly V. Kveder ◽  
Wolfgang Schröter ◽  
Michael Seibt

Deep electronic states associated with iron silicide precipitates have been studied by means of deep-level transient spectroscopy. The observed spectra show the characteristic features of bandlike states at extended defects. From the stability of the states on annealing at moderate temperature they are tentatively attributed to precipitate-matrix interfaces.



Physica B+C ◽  
1983 ◽  
Vol 116 (1-3) ◽  
pp. 116-120 ◽  
Author(s):  
L.A. Hemstreet
Keyword(s):  


1998 ◽  
Vol 43 (12-13) ◽  
pp. 1945-1949 ◽  
Author(s):  
Yongjun Leng ◽  
Jianqing Zhang ◽  
Shaoan Cheng ◽  
Chu'nan Cao ◽  
Zishuang Ye


Soft Matter ◽  
2016 ◽  
Vol 12 (33) ◽  
pp. 7028-7037 ◽  
Author(s):  
Sarah E. Feicht ◽  
Aditya S. Khair


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