Epitaxial Growth on Porous Si for a New Bond and Etchback Silicon‐on‐Insulator

AbstractThe transfer of thin monocrystalline silicon films to foreign substrates is of great interest for a number of applications such as silicon on insulator devices, active matrix displays and thin film solar cells. We present a transfer approach for the fabrication of monocrystalline Si films on foreign substrates based on the formation ofquasi-monocrystallineSi-films. Our transfer approach is compatible with high temperature processing such as epitaxial growth at 1100°C, thermal oxidation and phosphorous diffusion. Reuse of Si host wafers is demonstrated by the subsequent epitaxial growth of three monocrystalline Si films on a single host wafer. Monocrystalline Si films with a thickness of 15 µm and a diameter of 3” are transferred to glass and flexible plastic substrates. The typical light point defect density in films transferred from virgin wafers ranges between 10 to 100 cm−2, while stacking fault and dislocation densities are ≤ 100 cm−2. The minority carrier diffusion length in the epitaxial Si films is around 50 µm.

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A new silicon‐on‐insulator structure using a silicon molecular beam epitaxial growth on porous silicon

Applied Physics Letters ◽

10.1063/1.93298 ◽

1982 ◽

Vol 41 (1) ◽

pp. 86-88 ◽

Cited By ~ 45

Author(s):

Shinsuke Konaka ◽

Michiharu Tabe ◽

Tetsushi Sakai

Keyword(s):

Porous Silicon ◽

Epitaxial Growth ◽

Molecular Beam ◽

Silicon On Insulator ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Agglomeration control during the selective epitaxial growth of Si raised sources and drains on ultra-thin silicon-on-insulator substrates

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2005.03.088 ◽

2005 ◽

Vol 280 (3-4) ◽

pp. 530-538 ◽

Cited By ~ 56

Author(s):

C. Jahan ◽

O. Faynot ◽

L. Tosti ◽

J.M. Hartmann

Keyword(s):

Epitaxial Growth ◽

Silicon On Insulator ◽

Selective Epitaxial Growth ◽

Thin Silicon

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Growth of Crystalline Quality Sic on Thin and Thick Silicon-on-Insulator Structures

MRS Proceedings ◽

10.1557/proc-423-409 ◽

1996 ◽

Vol 423 ◽

Cited By ~ 7

Author(s):

F. Namavar ◽

P. Colter ◽

E. Gagnon ◽

A. Cremins-Costa ◽

D. Perry ◽

...

Keyword(s):

Silicon Carbide ◽

Electron Diffraction ◽

Epitaxial Growth ◽

Lower Cost ◽

Surface Cleaning ◽

Low Energy ◽

Silicon On Insulator ◽

Si Substrates ◽

Soi Substrates ◽

Sic Films

AbstractWe have grown silicon carbide (SiC) on ultrathin Si (about 300Å) and on thick Si (about 2000Å) on commercial SIMOX (from IBIS Corp and SOITEC, Inc.), and bulk Si. Electron diffraction and Rutherford backscattering spectroscopy (RBS)/channeling studies indicate epitaxial growth of singlecrystal β-SiC even at growth temperatures as low as 1100°C.We have already demonstrated the fabrication of ultrathin Si, as thin as 140Å on SiO2 by using the low-energy SIMOX (LES) (20 to 30 keV) process to produce films of lower cost and excellent integrity compared to thinned commercial SIMOX. Based on these results, ultrathin Si-on-insulator (SOI) substrates appear to have great potential for device quality SiC films. However, the carbonization and/or growth of SiC on ultrathin Si requires further optimization because the processes for surface cleaning and growth of SiC on bulk Si substrates cannot be applied because of the thinness of the substrate layers. Additional carbonization work at higher temperatures has indicated the possibility of converting the entire Si top layer.

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