Growth of Crystalline Quality Sic on Thin and Thick Silicon-on-Insulator Structures

1996 ◽  
Vol 423 ◽  
Author(s):  
F. Namavar ◽  
P. Colter ◽  
E. Gagnon ◽  
A. Cremins-Costa ◽  
D. Perry ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electron Diffraction ◽  
Epitaxial Growth ◽  
Lower Cost ◽  
Surface Cleaning ◽  
Low Energy ◽  
Silicon On Insulator ◽  
Si Substrates ◽  
Soi Substrates ◽  
Sic Films

AbstractWe have grown silicon carbide (SiC) on ultrathin Si (about 300Å) and on thick Si (about 2000Å) on commercial SIMOX (from IBIS Corp and SOITEC, Inc.), and bulk Si. Electron diffraction and Rutherford backscattering spectroscopy (RBS)/channeling studies indicate epitaxial growth of singlecrystal β-SiC even at growth temperatures as low as 1100°C.We have already demonstrated the fabrication of ultrathin Si, as thin as 140Å on SiO2 by using the low-energy SIMOX (LES) (20 to 30 keV) process to produce films of lower cost and excellent integrity compared to thinned commercial SIMOX. Based on these results, ultrathin Si-on-insulator (SOI) substrates appear to have great potential for device quality SiC films. However, the carbonization and/or growth of SiC on ultrathin Si requires further optimization because the processes for surface cleaning and growth of SiC on bulk Si substrates cannot be applied because of the thinness of the substrate layers. Additional carbonization work at higher temperatures has indicated the possibility of converting the entire Si top layer.

Chemical-vapor-deposition growth and characterization of epitaxial 3C–SiC films on SOI substrates with thin silicon top layers

2001 ◽  
Vol 16 (1) ◽  
pp. 24-27 ◽  
Author(s):  
C. K. Moon ◽  
H. J. Song ◽  
J. K. Kim ◽  
J. H. Park ◽  
S. J. Jang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon On Insulator ◽  
Significant Shift ◽  
Misfit Dislocations ◽  
Chemical Vapor Deposition Growth ◽  
Hydrogen Flow ◽  
Soi Substrates ◽  
Sic Films

Epitaxial 3C–SiC films were grown by chemical vapor deposition on the silicon-on-insulator (SOI) substrates with 20–75-nm-thick Si top layers. A relatively low growth temperature of 1150 °C and a reduced hydrogen flow rate of 1 lpm during the precarbonization process was necessary to preserve the SOI structure and thereby obtain high-quality SiC films. The transmission electron microscopy observation of the SiC/SOI structures revealed high density of misfit dislocations in the SiC film, but no dislocation within the top Si layer. The x-ray-diffraction results did not show any significant shift of the (400) SiC peak position among the SiC/Si and the SiC/SOI samples. This strongly suggests that the Si top layer is not deformed during the SiC/SOI growth and the strain within the 3C–SiC layer is not critically affected by substituting the Si substrate with the SOI substrate, even when the Si top layer is as thin as 20 nm.

Strain Relaxation in SiGe Thin Films Studied by Low-Energy Electron Microscopy

2001 ◽  
Vol 696 ◽  
Author(s):  
A.R. Woll ◽  
P. Moran ◽  
E.M. Rehder ◽  
B. Yang ◽  
T.F. Kuech ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Strain Relaxation ◽  
Surface Cleaning ◽  
Low Energy ◽  
Silicon On Insulator ◽  
Surface Strain ◽  
Energy Electron ◽  
High Temperature Annealing ◽  
Low Energy Electron ◽  
Dislocation Multiplication

AbstractWe demonstrate the use of low-energy electron microscopy (LEEM) as a tool for studying dis-location formation in low-Ge-content SiGe films on Si(001) and silicon-on-insulator. Compared to TEM, sample preparation for LEEM consists only of conventional surface cleaning. Yet, because of its sensitivity to local variations in surface strain on Si(001), LEEM can detect dislocations at the earliest stages of strain relaxation. In identically prepared SiGe films, the typical dislocation extends over the entire viewable region of several hundred microns in SiGe/Si, but is less than 100 microns in SiGe/SOI. In addition, dislocation cross-slip and threading segments are common in SiGe/SOI, but virtually non-existent in SiGe/Si. We have also observed dislocation formation in real-time during high temperature annealing. Preliminary results appear to demonstrate dislocation multiplication and blocking at a perpendicular glide plane. The applicability of LEEM to strain relaxation in other Si-based systems will be discussed.

scholarly journals Mechanical Properties of 3C-SiC Films for MEMS Applications

2007 ◽  
Vol 1049 ◽  
Author(s):  
Jayadeep Deva Reddy ◽  
Alex A. Volinsky ◽  
Christopher L. Frewin ◽  
Chris Locke ◽  
Stephen E. Saddow
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Silicon Carbide ◽  
Plastic Deformation ◽  
Elastic Modulus ◽  
Single Crystal ◽  
Elastic Contact ◽  
Si Substrates ◽  
Sic Films

AbstractThere is a technological need for hard thin films with high elastic modulus and fracture toughness. Silicon carbide (SiC) fulfills such requirements for a variety of applications at high temperatures and for high-wear MEMS. A detailed study of the mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si substrates was performed by means of nanoindentation using a Berkovich diamond tip. The thickness of both the single and polycrystalline SiC films was around 1-2 μm. Under indentation loads below 500 μN both films exhibit Hertzian elastic contact without plastic deformation. The polycrystalline SiC films have an elastic modulus of 457 GPa and hardness of 33.5 GPa, while the single crystalline SiC films elastic modulus and hardness were measured to be 433 GPa and 31.2 GPa, respectively. These results indicate that polycrystalline SiC thin films are more attractive for MEMS applications when compared with the single crystal 3C-SiC, which is promising since growing single crystal 3C-SiC films is more challenging.

Tem, Raman, and Langmuir Probe Studies of the Heteroepitaxial Growth of Metastable Cd(x)pb (1–X) Te Alloys Deposited on BaF2 by Low-Energy Bias Sputtering

1990 ◽  
Vol 201 ◽  
Author(s):  
Suhit R. Das ◽  
John G. Cook ◽  
David J. Lockwood
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Epitaxial Growth ◽  
Langmuir Probe ◽  
Low Energy ◽  
Heteroepitaxial Growth ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Magnetron Sputter

AbstractMetastable Cd(x)Pb(1–x)Te films with x values from 0 to 0.47, well past the range of bulk thermodynamic solubility, have been grown on single crystal (lll) BaF2 by co-deposition from CdTe and PbTe r.f. magnetron sputter targets. Cross-sectional transmission electron microscopy and transmission electron diffraction revealed epitaxial growth across the interface. However, the lattice of the deposited epilayers was observed to be typically rotated 180°C about the surface normal <111> axis of the substrate. Raman spectra of the alloys showed no evidence of segregation. Langmuir probe diagnostics were employed to estimate the energy of the ions incident on the substrate during growth which promote extended miscibility in the alloy epilayers.

Detecting stacking faults during epitaxial growth by low energy electron diffraction

1996 ◽  
Vol 345 (3) ◽  
pp. 320-330 ◽  
Author(s):  
H. Ascolani ◽  
J.R. Cerda ◽  
P.L. de Andres ◽  
J.J. de Miguel ◽  
R. Miranda ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Epitaxial Growth ◽  
Stacking Faults ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

PECVD Silicon Carbide as a Thin Film Packaging Material for Microfabricated Neural Electrodes

2007 ◽  
Vol 1009 ◽  
Author(s):  
Allison Hess ◽  
Rocco Parro ◽  
Jiangang Du ◽  
Jeremy Dunning ◽  
Maximillian Scardelletti ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Chemical Vapor ◽  
Leakage Currents ◽  
Si Substrates ◽  
Thin Film Coatings ◽  
Flat Interface ◽  
Neural Electrodes ◽  
Moisture Barriers ◽  
Sic Films

AbstractThis paper reports our effort to develop amorphous silicon carbide (a-SiC) films for use as hermetic thin film coatings for mechanically-flexible neural electrodes. In our work, the a-SiC films were deposited by plasma enhanced chemical vapor deposition (PECVD) using two distinct methods, namely a single precursor approach using trimethylsilane, and a dual precursor approach using methane (CH4) and silane (SiH4). The mechanical properties of films deposited on Si substrates were characterized using the wafer curvature and load-deflection methods. The effectiveness of the films as moisture barriers for polyimide substrates was characterized by measuring the leakage currents of SiC-coated interdigitated electrode structures soaked in PBS. A microfabricated prototype of the flat interface nerve electrode (FINE) based on a flexible polyimide substrate and a PECVD SiC capping layer was fabricated using a monolithic process based on conventional micromachining techniques. To facilitate this approach, a reactive ion etching process was developed that exhibited high etch rates and high selectively to the SiC films.

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